LSF80R680GT MOSFET. Datasheet pdf. Equivalent
Type Designator: LSF80R680GT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 26 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm
Package: TO-262
LSF80R680GT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LSF80R680GT Datasheet (PDF)
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