LSG65R930GT MOSFET. Datasheet pdf. Equivalent
Type Designator: LSG65R930GT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13.6 nC
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 15.9 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.93 Ohm
Package: TO-252
LSG65R930GT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LSG65R930GT Datasheet (PDF)
lsd65r930gt lsg65r930gt lsh65r930gt.pdf
LSD65R930GT/LSG65R930GT/ LSH65R930GTLonFETLonten N-channel 650V, 4A, 930m LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The R 930mDS(on),maxresulting device has extremely low on I 12ADMresistance, making it especially suitable for Q 13.6nCg,typapplications which require
lsdn65r950ht lsg65r950ht lsh65r950ht.pdf
LSDN65R950HT/LSG65R950HT/ LSH65R950HT LonFET Lonten N-channel 650V, 4A, 950m LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 950m device has extremely low on resistance, making it IDM 12A especially suitable for applications which require Qg,typ 7.6nC
lsc65r380ht lsd65r380ht lse65r380ht lsf65r380ht lsdn65r380ht lsh65r380ht lsg65r380ht lsnc65r380ht lsn65r380ht.pdf
LSC65R380HT /LSD65R380HT / LSE65R380HT /LSF65R380HT/LSDN65R380HTLSH65R380HT/LSG65R380HT/LSNC65R380HT/LSN65R380HTLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it
lsc65r290hf lsg65r290hf lsh65r290hf lsd65r290hf lsf65r290hf lse65r290hf.pdf
LSC65R290HF/LSG65R290HF/LSH65R290HF/LSD65R290HF/LSF65R290HF/ LSE65R290HFLonFETLonten N-channel 650V, 15A, 0.29 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.29DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for appli
lsd65r1k5ht lsg65r1k5ht lsh65r1k5ht lse65r1k5ht lss65r1k5ht.pdf
LSD65R1K5HT/LSG65R1K5HT/ LSH65R1K5HT/ LSE65R1K5HT/ LSS65R1K5HTLonFETLonten N-channel 650V, 3A, 1.5 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 1.5DS(on),maxdevice has extremely low on resistance, making it I 9ADMespecially suitable for applications which re
lsc65r380gt lsd65r380gt lse65r380gt lsf65r380gt lsg65r380gt.pdf
LSC65R380GT/LSD65R380GT/LSE65R380GT/LSF65R380GT/LSG65R380GTLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which
lsc65r380ht lsd65r380ht lse65r380ht lsf65r380ht lsg65r380ht.pdf
LSC65R380HT /LSD65R380HT / LSE65R380HT /LSF65R380HT/LSG65R380HT LonFET Lonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.38 device has extremely low on resistance, making it IDM 30A especially suitable for applications wh
lsc65r380gf lsd65r380gf lse65r380gf lsf65r380gf lsg65r380gf.pdf
LSC65R380GF/LSD65R380GF/LSE65R380GF/LSF65R380GF/LSG65R380GFLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which
lsg65r2k5gt lsh65r2k5gt.pdf
LSG65R2K5GT/ LSH65R2K5GTLonFETLonten N-channel 650V, 2A, 2.5 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 2.5DS(on),maxdevice has extremely low on resistance, making it I 5ADMespecially suitable for applications which require Q 9.5nCg,typsuperior power d
lsd65r280ht lsg65r280ht lsh65r280ht lsf65r280ht lse65r280ht lsc65r280ht.pdf
LSD65R280HT/LSG65R280HT/LSH65R280HT/LSF65R280HT/LSE65R280HT/LSC65R280HTLonFETLonten N-channel 650V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for applic
lsc65r650ht lsd65r650ht lsdn65r650ht lse65r650ht lsg65r650ht lsh65r650ht.pdf
LSC65R650HT/LSD65R650HT/ LSDN65R650HT/ LSE65R650HT/LSG65R650HT/LSH65R650HTLonFETLonten N-channel 650V, 7A, 0.65 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.65DS(on),maxdevice has extremely low on resistance, making it I 21ADMespecially suitable for appl
lsc65r380gt lsd65r380gt lsh65r380gt lse65r380gt lsf65r380gt lsg65r380gt.pdf
LSC65R380GT/LSD65R380GT/LSH65R380GT/LSE65R380GT/LSF65R380GT/LSG65R380GTLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applic
lsd65r280ht lsg65r280ht lsh65r280ht lsf65r280ht lse65r280ht.pdf
LSD65R280HT/LSG65R280HT/LSH65R280HT/LSF65R280HT/ LSE65R280HTLonFETLonten N-channel 650V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for applications which
lsc65r570gt lsd65r570gt lsg65r570gt lsh65r570gt lse65r570gt lsf65r570gt.pdf
LSC65R570GT/LSD65R570GT/LSG65R570GT/ LSH65R570GT/ LSE65R570GT / LSF65R570GT LonFET Lonten N-channel 650V, 7A, 0.57 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.57 device has extremely low on resistance, making it IDM 21A especially suitable for ap
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: BLM8205E-J | IXTA130N10T
History: BLM8205E-J | IXTA130N10T
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918