All MOSFET. LSG65R930GT Datasheet

 

LSG65R930GT MOSFET. Datasheet pdf. Equivalent


   Type Designator: LSG65R930GT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.6 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 15.9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.93 Ohm
   Package: TO-252

 LSG65R930GT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LSG65R930GT Datasheet (PDF)

 ..1. Size:1165K  lonten
lsd65r930gt lsg65r930gt lsh65r930gt.pdf

LSG65R930GT
LSG65R930GT

LSD65R930GT/LSG65R930GT/ LSH65R930GTLonFETLonten N-channel 650V, 4A, 930m LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The R 930mDS(on),maxresulting device has extremely low on I 12ADMresistance, making it especially suitable for Q 13.6nCg,typapplications which require

 7.1. Size:973K  lonten
lsdn65r950ht lsg65r950ht lsh65r950ht.pdf

LSG65R930GT
LSG65R930GT

LSDN65R950HT/LSG65R950HT/ LSH65R950HT LonFET Lonten N-channel 650V, 4A, 950m LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 950m device has extremely low on resistance, making it IDM 12A especially suitable for applications which require Qg,typ 7.6nC

 8.1. Size:1512K  lonten
lsc65r380ht lsd65r380ht lse65r380ht lsf65r380ht lsdn65r380ht lsh65r380ht lsg65r380ht lsnc65r380ht lsn65r380ht.pdf

LSG65R930GT
LSG65R930GT

LSC65R380HT /LSD65R380HT / LSE65R380HT /LSF65R380HT/LSDN65R380HTLSH65R380HT/LSG65R380HT/LSNC65R380HT/LSN65R380HTLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it

 8.2. Size:1271K  lonten
lsc65r290hf lsg65r290hf lsh65r290hf lsd65r290hf lsf65r290hf lse65r290hf.pdf

LSG65R930GT
LSG65R930GT

LSC65R290HF/LSG65R290HF/LSH65R290HF/LSD65R290HF/LSF65R290HF/ LSE65R290HFLonFETLonten N-channel 650V, 15A, 0.29 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.29DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for appli

 8.3. Size:1176K  lonten
lsd65r1k5ht lsg65r1k5ht lsh65r1k5ht lse65r1k5ht lss65r1k5ht.pdf

LSG65R930GT
LSG65R930GT

LSD65R1K5HT/LSG65R1K5HT/ LSH65R1K5HT/ LSE65R1K5HT/ LSS65R1K5HTLonFETLonten N-channel 650V, 3A, 1.5 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 1.5DS(on),maxdevice has extremely low on resistance, making it I 9ADMespecially suitable for applications which re

 8.4. Size:1357K  lonten
lsc65r380gt lsd65r380gt lse65r380gt lsf65r380gt lsg65r380gt.pdf

LSG65R930GT
LSG65R930GT

LSC65R380GT/LSD65R380GT/LSE65R380GT/LSF65R380GT/LSG65R380GTLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which

 8.5. Size:1176K  lonten
lsc65r380ht lsd65r380ht lse65r380ht lsf65r380ht lsg65r380ht.pdf

LSG65R930GT
LSG65R930GT

LSC65R380HT /LSD65R380HT / LSE65R380HT /LSF65R380HT/LSG65R380HT LonFET Lonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.38 device has extremely low on resistance, making it IDM 30A especially suitable for applications wh

 8.6. Size:1360K  lonten
lsc65r380gf lsd65r380gf lse65r380gf lsf65r380gf lsg65r380gf.pdf

LSG65R930GT
LSG65R930GT

LSC65R380GF/LSD65R380GF/LSE65R380GF/LSF65R380GF/LSG65R380GFLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which

 8.7. Size:867K  lonten
lsg65r2k5gt lsh65r2k5gt.pdf

LSG65R930GT
LSG65R930GT

LSG65R2K5GT/ LSH65R2K5GTLonFETLonten N-channel 650V, 2A, 2.5 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 2.5DS(on),maxdevice has extremely low on resistance, making it I 5ADMespecially suitable for applications which require Q 9.5nCg,typsuperior power d

 8.8. Size:1285K  lonten
lsd65r280ht lsg65r280ht lsh65r280ht lsf65r280ht lse65r280ht lsc65r280ht.pdf

LSG65R930GT
LSG65R930GT

LSD65R280HT/LSG65R280HT/LSH65R280HT/LSF65R280HT/LSE65R280HT/LSC65R280HTLonFETLonten N-channel 650V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for applic

 8.9. Size:1447K  lonten
lsc65r650ht lsd65r650ht lsdn65r650ht lse65r650ht lsg65r650ht lsh65r650ht.pdf

LSG65R930GT
LSG65R930GT

LSC65R650HT/LSD65R650HT/ LSDN65R650HT/ LSE65R650HT/LSG65R650HT/LSH65R650HTLonFETLonten N-channel 650V, 7A, 0.65 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.65DS(on),maxdevice has extremely low on resistance, making it I 21ADMespecially suitable for appl

 8.10. Size:1444K  lonten
lsc65r380gt lsd65r380gt lsh65r380gt lse65r380gt lsf65r380gt lsg65r380gt.pdf

LSG65R930GT
LSG65R930GT

LSC65R380GT/LSD65R380GT/LSH65R380GT/LSE65R380GT/LSF65R380GT/LSG65R380GTLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applic

 8.11. Size:1258K  lonten
lsd65r280ht lsg65r280ht lsh65r280ht lsf65r280ht lse65r280ht.pdf

LSG65R930GT
LSG65R930GT

LSD65R280HT/LSG65R280HT/LSH65R280HT/LSF65R280HT/ LSE65R280HTLonFETLonten N-channel 650V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for applications which

 8.12. Size:1184K  lonten
lsc65r570gt lsd65r570gt lsg65r570gt lsh65r570gt lse65r570gt lsf65r570gt.pdf

LSG65R930GT
LSG65R930GT

LSC65R570GT/LSD65R570GT/LSG65R570GT/ LSH65R570GT/ LSE65R570GT / LSF65R570GT LonFET Lonten N-channel 650V, 7A, 0.57 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.57 device has extremely low on resistance, making it IDM 21A especially suitable for ap

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BLM8205E-J | IXTA130N10T

 

 
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