LSG80R2K8GT MOSFET Datasheet: N-Ch, 800V, 2A. Full specification with pinout and replacement list

LSG80R2K8GT Specs and Replacement

Type Designator: LSG80R2K8GT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33.7 nS

Cossⓘ - Output Capacitance: 8.78 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: TO-252

LSG80R2K8GT substitution

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LSG80R2K8GT datasheet

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LSC80R980GT/LSD80R980GT/LSE80R980GT/ LSF80R980GT/LSG80R980GT/LSH80R980GT LonFET Lonten N-channel 800V, 5A, 0.98 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 850V DS j,max advanced super junction technology. The resulting R 0.98 DS(on),max device has extremely low on resistance, making it I 5A DM especially suitable for applicat... See More ⇒

Detailed specifications: LSG65R570GT, LSG65R650HT, LSG65R930GT, LSG65R950HT, LSG70R1KGT, LSG70R380GT, LSG70R450GT, LSG70R640GT, IRFZ24N, LSG80R680GT, LSG80R980GT, LSGC03R020, LSGC04R025, LSGC04R029, LSGC04R035, LSGC06R034W3, LSGC085R041W3