LSGC03R020 MOSFET Datasheet: N-Ch, 30V, 120A. Full specification with pinout and replacement list

LSGC03R020 Specs and Replacement

Type Designator: LSGC03R020

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42.14 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 1830 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: TO-220

LSGC03R020 substitution

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LSGC03R020 datasheet

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LSGC06R034W3 LSGE06R034W3 LSGN06R034W3 LSGG06R034W3 Lonten N-channel 60 V, 80 A, 3.4m Power MOSFET Features Product Summary VDS 60V Extremely low on-resistance R DS(on) RDS(on)@10V typ 2.8m Excellent Q xR product(FOM) g DS(on) RDS(on)@4.5V typ 3.6m Qualified according to JEDEC criteria I D 80A Applications Synchronous Rectification for AC/DC QuickCharger 1... See More ⇒

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