All MOSFET. LSGC04R035 Datasheet

 

LSGC04R035 Datasheet and Replacement


   Type Designator: LSGC04R035
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 85.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 639 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO-220
 

 LSGC04R035 substitution

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LSGC04R035 Datasheet (PDF)

 ..1. Size:933K  lonten
lsgc04r035 lsgd04r035 lsge04r035 lsgg04r035 lsgh04r035 lsgn04r035.pdf pdf_icon

LSGC04R035

LSGC04R035/LSGD04R035/LSGE04R035/LSGG04R035/LSGH04R035/LSGN04R035Lonten N-channel 40V, 120A, 3.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 3.5mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance

 6.1. Size:746K  lonten
lsgn04r025 lsgc04r025.pdf pdf_icon

LSGC04R035

LSGN04R025/LSGC04R025Lonten N-channel 40V, 120A, 2.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.5mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching performance, and

 6.2. Size:1070K  lonten
lsgc04r029 lsgg04r029 lsgh04r029 lsgn04r029.pdf pdf_icon

LSGC04R035

LSGC04R029/LSGG04R029/LSGH04R029/LSGN04R029Lonten N-channel 40V, 120A, 2.9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.9mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior swit

 9.1. Size:749K  lonten
lsgn03r020 lsgg03r020 lsgc03r020.pdf pdf_icon

LSGC04R035

LSGN03R020/LSGG03R020/LSGC03R020Lonten N-channel 30V, 120A, 2.0m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 30VDSSeffect transistors are using split gate trench DMOS RDS(on),max@ V =10V 2.0mGStechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching perf

Datasheet: LSG70R450GT , LSG70R640GT , LSG80R2K8GT , LSG80R680GT , LSG80R980GT , LSGC03R020 , LSGC04R025 , LSGC04R029 , IRF730 , LSGC06R034W3 , LSGC085R041W3 , LSGC085R065W3 , LSGC10R080W3 , LSGC15R085W3 , LSGD04R035 , LSGD10R080W3 , LSGE04R035 .

History: BSH114 | SIHF840AS | AP75N07GW | UTT6NP10G-S08-R | SIA537EDJ | AOTS21319C | QM2N7002E3K1

Keywords - LSGC04R035 MOSFET datasheet

 LSGC04R035 cross reference
 LSGC04R035 equivalent finder
 LSGC04R035 lookup
 LSGC04R035 substitution
 LSGC04R035 replacement

 

 
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