LSGC04R035 MOSFET. Datasheet pdf. Equivalent
Type Designator: LSGC04R035
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 85.8 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 120 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 33.8 nC
Rise Time (tr): 4.5 nS
Drain-Source Capacitance (Cd): 639 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0035 Ohm
Package: TO-220
LSGC04R035 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LSGC04R035 Datasheet (PDF)
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