LSGC085R065W3 MOSFET Datasheet: N-Ch, 85V, 80A. Full specification with pinout and replacement list

LSGC085R065W3 Specs and Replacement

Type Designator: LSGC085R065W3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 138 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 601 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO-220

LSGC085R065W3 substitution

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LSGC085R065W3 datasheet

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LSGC085R041W3 LSGE085R041W3 Lonten N-channel 85 V, 120A, 4.1m Power MOSFET Features Product Summary VDS 85V Extremely low on-resistance R DS(on) RDS(on) 3.4m Excellent Q xR product(FOM) g DS(on) I D 120A Qualified according to JEDEC criteria Applications Motor control and drive 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche... See More ⇒

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LSGN04R025/LSGC04R025 Lonten N-channel 40V, 120A, 2.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using split gate trench DMOS R GS DS(on),max@ V =10V 2.5m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior switching performance, and... See More ⇒

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LSGN03R020/LSGG03R020/LSGC03R020 Lonten N-channel 30V, 120A, 2.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 30V DSS effect transistors are using split gate trench DMOS R DS(on),max@ V =10V 2.0m GS technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior switching perf... See More ⇒