All MOSFET. LSGE06R034W3 Datasheet

 

LSGE06R034W3 Datasheet and Replacement


   Type Designator: LSGE06R034W3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 79.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46.5 nS
   Cossⓘ - Output Capacitance: 1050 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: TO-263
 

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LSGE06R034W3 Datasheet (PDF)

 ..1. Size:813K  lonten
 lsgc06r034w3 lsge06r034w3 lsgn06r034w3 lsgg06r034w3.pdf pdf_icon

LSGE06R034W3

LSGC06R034W3\LSGE06R034W3\LSGN06R034W3\LSGG06R034W3Lonten N-channel 60 V, 80 A, 3.4m Power MOSFETFeatures Product SummaryVDS 60V Extremely low on-resistance RDS(on)RDS(on)@10V typ 2.8m Excellent Q xR product(FOM)g DS(on)RDS(on)@4.5V typ 3.6m Qualified according to JEDEC criteriaID 80AApplications Synchronous Rectification for AC/DC QuickCharger1

 9.1. Size:806K  lonten
 lsgc085r041w3 lsge085r041w3.pdf pdf_icon

LSGE06R034W3

LSGC085R041W3\LSGE085R041W3Lonten N-channel 85 V, 120A, 4.1m Power MOSFETFeatures Product SummaryVDS 85V Extremely low on-resistance RDS(on)RDS(on) 3.4m Excellent Q xR product(FOM)g DS(on)ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche

 9.2. Size:1291K  lonten
 lsgc085r065w3 lsge085r065w3 lsgn085r065w3.pdf pdf_icon

LSGE06R034W3

LSGC085R065W3\LSGE085R065W3\LSGN085R065W3Lonten N-channel 85 V, 80A, 6.5m Power MOSFETFeatures Product SummaryVDS 85V Extremely low on-resistance RDS(on)RDS(on) 6.5m Excellent Q xR product(FOM)g DS(on)ID 80A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested10

 9.3. Size:933K  lonten
 lsgc04r035 lsgd04r035 lsge04r035 lsgg04r035 lsgh04r035 lsgn04r035.pdf pdf_icon

LSGE06R034W3

LSGC04R035/LSGD04R035/LSGE04R035/LSGG04R035/LSGH04R035/LSGN04R035Lonten N-channel 40V, 120A, 3.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 3.5mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance

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Datasheet: LSGC06R034W3 , LSGC085R041W3 , LSGC085R065W3 , LSGC10R080W3 , LSGC15R085W3 , LSGD04R035 , LSGD10R080W3 , LSGE04R035 , IRFB7545 , LSGE085R041W3 , LSGE085R065W3 , LSGE10R080W3 , LSGE15R085W3 , LSGG03R020 , LSGG04R028 , LSGG04R029 , LSGG04R035 .

History: BRCS350P04DP

Keywords - LSGE06R034W3 MOSFET datasheet

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