LSGE06R034W3 Specs and Replacement
Type Designator: LSGE06R034W3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 79.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 46.5 nS
Cossⓘ - Output Capacitance: 1050 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
Package: TO-263
LSGE06R034W3 substitution
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LSGE06R034W3 datasheet
lsgc06r034w3 lsge06r034w3 lsgn06r034w3 lsgg06r034w3.pdf
LSGC06R034W3 LSGE06R034W3 LSGN06R034W3 LSGG06R034W3 Lonten N-channel 60 V, 80 A, 3.4m Power MOSFET Features Product Summary VDS 60V Extremely low on-resistance R DS(on) RDS(on)@10V typ 2.8m Excellent Q xR product(FOM) g DS(on) RDS(on)@4.5V typ 3.6m Qualified according to JEDEC criteria I D 80A Applications Synchronous Rectification for AC/DC QuickCharger 1... See More ⇒
lsgc085r041w3 lsge085r041w3.pdf
LSGC085R041W3 LSGE085R041W3 Lonten N-channel 85 V, 120A, 4.1m Power MOSFET Features Product Summary VDS 85V Extremely low on-resistance R DS(on) RDS(on) 3.4m Excellent Q xR product(FOM) g DS(on) I D 120A Qualified according to JEDEC criteria Applications Motor control and drive 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche... See More ⇒
lsgc085r065w3 lsge085r065w3 lsgn085r065w3.pdf
LSGC085R065W3 LSGE085R065W3 LSGN085R065W3 Lonten N-channel 85 V, 80A, 6.5m Power MOSFET Features Product Summary VDS 85V Extremely low on-resistance R DS(on) RDS(on) 6.5m Excellent Q xR product(FOM) g DS(on) I D 80A Qualified according to JEDEC criteria Applications Motor control and drive 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 10... See More ⇒
lsgc04r035 lsgd04r035 lsge04r035 lsgg04r035 lsgh04r035 lsgn04r035.pdf
LSGC04R035/LSGD04R035/LSGE04R035/ LSGG04R035/LSGH04R035/LSGN04R035 Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using split gate trench DMOS R GS DS(on),max@ V =10V 3.5m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance... See More ⇒
Detailed specifications: LSGC06R034W3, LSGC085R041W3, LSGC085R065W3, LSGC10R080W3, LSGC15R085W3, LSGD04R035, LSGD10R080W3, LSGE04R035, IRFB7545, LSGE085R041W3, LSGE085R065W3, LSGE10R080W3, LSGE15R085W3, LSGG03R020, LSGG04R028, LSGG04R029, LSGG04R035
Keywords - LSGE06R034W3 MOSFET specs
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History: AOI4T60 | SUM55P06-19L
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