All MOSFET. LSGE085R041W3 Datasheet

 

LSGE085R041W3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: LSGE085R041W3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 74 nC
   trⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 1480 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
   Package: TO-263

 LSGE085R041W3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LSGE085R041W3 Datasheet (PDF)

 ..1. Size:806K  lonten
 lsgc085r041w3 lsge085r041w3.pdf

LSGE085R041W3 LSGE085R041W3

LSGC085R041W3\LSGE085R041W3Lonten N-channel 85 V, 120A, 4.1m Power MOSFETFeatures Product SummaryVDS 85V Extremely low on-resistance RDS(on)RDS(on) 3.4m Excellent Q xR product(FOM)g DS(on)ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche

 5.1. Size:1291K  lonten
 lsgc085r065w3 lsge085r065w3 lsgn085r065w3.pdf

LSGE085R041W3 LSGE085R041W3

LSGC085R065W3\LSGE085R065W3\LSGN085R065W3Lonten N-channel 85 V, 80A, 6.5m Power MOSFETFeatures Product SummaryVDS 85V Extremely low on-resistance RDS(on)RDS(on) 6.5m Excellent Q xR product(FOM)g DS(on)ID 80A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested10

 9.1. Size:813K  lonten
 lsgc06r034w3 lsge06r034w3 lsgn06r034w3 lsgg06r034w3.pdf

LSGE085R041W3 LSGE085R041W3

LSGC06R034W3\LSGE06R034W3\LSGN06R034W3\LSGG06R034W3Lonten N-channel 60 V, 80 A, 3.4m Power MOSFETFeatures Product SummaryVDS 60V Extremely low on-resistance RDS(on)RDS(on)@10V typ 2.8m Excellent Q xR product(FOM)g DS(on)RDS(on)@4.5V typ 3.6m Qualified according to JEDEC criteriaID 80AApplications Synchronous Rectification for AC/DC QuickCharger1

 9.2. Size:933K  lonten
 lsgc04r035 lsgd04r035 lsge04r035 lsgg04r035 lsgh04r035 lsgn04r035.pdf

LSGE085R041W3 LSGE085R041W3

LSGC04R035/LSGD04R035/LSGE04R035/LSGG04R035/LSGH04R035/LSGN04R035Lonten N-channel 40V, 120A, 3.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 3.5mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: MMBT7002W

 

 
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