All MOSFET. LSGE10R080W3 Datasheet

 

LSGE10R080W3 Datasheet and Replacement


   Type Designator: LSGE10R080W3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 453 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-263
 

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LSGE10R080W3 Datasheet (PDF)

 ..1. Size:912K  lonten
 lsgc10r080w3 lsgd10r080w3 lsge10r080w3.pdf pdf_icon

LSGE10R080W3

LSGC10R080W3/LSGD10R080W3/LSGE10R080W3Lonten N-channel 100V, 80A, 8m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 100VDSSeffect transistors are using split gate trench DMOS RDS(on).max@ VGS=10V 8mtechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching perform

 9.1. Size:797K  lonten
 lsgc15r085w3 lsge15r085w3.pdf pdf_icon

LSGE10R080W3

LSGC15R085W3\LSGE15R085W3Lonten N-channel 150V, 120A, 8.5m Power MOSFETFeatures Product Summarym 150V,120 A,R =8.5 @ V =10VDS(ON).max GS VDS 150V Improved dv/dt capabilityRDS(on) 7m Fast switchingID 120A 100% EAS Guaranteed Green device availableApplications Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche

Datasheet: LSGC10R080W3 , LSGC15R085W3 , LSGD04R035 , LSGD10R080W3 , LSGE04R035 , LSGE06R034W3 , LSGE085R041W3 , LSGE085R065W3 , 2SK3918 , LSGE15R085W3 , LSGG03R020 , LSGG04R028 , LSGG04R029 , LSGG04R035 , LSGG06R034W3 , LSGG06R098W3 , LSGG08R060W3 .

History: SI4622DY | VBZL80N03

Keywords - LSGE10R080W3 MOSFET datasheet

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