LSGG08R060W3 MOSFET. Datasheet pdf. Equivalent
Type Designator: LSGG08R060W3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 46 nC
trⓘ - Rise Time: 38.9 nS
Cossⓘ - Output Capacitance: 888 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO-252
LSGG08R060W3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LSGG08R060W3 Datasheet (PDF)
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Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: MCB160N10Y | MSF9N90 | AP9561GP-HF | SL2300
History: MCB160N10Y | MSF9N90 | AP9561GP-HF | SL2300
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