LSGG08R060W3 Specs and Replacement
Type Designator: LSGG08R060W3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 38.9 nS
Cossⓘ - Output Capacitance: 888 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO-252
LSGG08R060W3 substitution
- MOSFET ⓘ Cross-Reference Search
LSGG08R060W3 datasheet
lsgh08r060w3 lsgg08r060w3.pdf
LSGH08R060W3/LSGG08R060W3 Lonten N-channel 85V, 80A, 6.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 85V DSS effect transistors are using split gate trench DMOS R GS DS(on).max@ V =10V 6.0m technology. This advanced technology has been I 80A D especially tailored to minimize on-state resistance, provide superior switching performance, a... See More ⇒
lsgn03r020 lsgg03r020 lsgc03r020.pdf
LSGN03R020/LSGG03R020/LSGC03R020 Lonten N-channel 30V, 120A, 2.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 30V DSS effect transistors are using split gate trench DMOS R DS(on),max@ V =10V 2.0m GS technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior switching perf... See More ⇒
lsgg04r028 lsgh04r028.pdf
LSGG04R028/LSGH04R028 Lonten N-channel 40V, 120A, 2.8m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 40V DSS effect transistors are using split gate trench DMOS R GS DS(on),max@ V =10V 2.8m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provide superior switching performance, and... See More ⇒
lsgg06r098w3 lsgn06r098w3.pdf
LSGG06R098W3/LSGN06R098W3 Lonten N-channel 60V, 80A, 9.8m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 60V DSS effect transistors are using split gate trench DMOS R DS(on).max@ V =10V 9.8m GS technology. This advanced technology has been I 80A D especially tailored to minimize on-state resistance, provide superior switching performance, ... See More ⇒
Detailed specifications: LSGE10R080W3, LSGE15R085W3, LSGG03R020, LSGG04R028, LSGG04R029, LSGG04R035, LSGG06R034W3, LSGG06R098W3, IRF730, LSGG10R085W3, LSGH04R028, LSGH04R029, LSGH04R035, LSGH08R060W3, LSGH10R085W3, LSGN03R020, LSGN04R025
Keywords - LSGG08R060W3 MOSFET specs
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LSGG08R060W3 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AOB1404L
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