LSGH04R029 MOSFET. Datasheet pdf. Equivalent
Type Designator: LSGH04R029
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 62.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 42.5 nC
trⓘ - Rise Time: 22.5 nS
Cossⓘ - Output Capacitance: 1130 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: TO-251
LSGH04R029 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LSGH04R029 Datasheet (PDF)
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