STP2N80FI
MOSFET. Datasheet pdf. Equivalent
Type Designator: STP2N80FI
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 1.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 31
nC
trⓘ - Rise Time: 42
nS
Cossⓘ -
Output Capacitance: 55
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 7
Ohm
Package:
ISOWATT220
STP2N80FI
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP2N80FI
Datasheet (PDF)
7.1. Size:1626K st
std2n80k5 stf2n80k5 stp2n80k5 stu2n80k5.pdf 
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7.2. Size:371K st
stp2n80.pdf
STP2N80STP2N80FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP2N80 800 V
9.1. Size:598K st
stp2nk90z std2nk90z std2nk90z-1.pdf
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9.2. Size:557K st
std2nk90z-1 std2nk90zt4 stp2nk90z.pdf
STD2NK90Z-1, STD2NK90ZT4, STP2NK90ZDatasheetN-channel 900 V, 5 typ., 2.1 A SuperMESH Power MOSFETs in IPAK, DPAK and TO-220 packagesFeaturesTAB TAB32VDS RDS(on) max. IDOrder code Package132IPAK DPAK1STD2NK90Z-1 IPAKTAB STD2NK90ZT4 900 V 6.5 2.1 A DPAKSTP2NK90Z TO-220 Extremely high dv/dt capability3TO-220 21 100% avalanche tested Ga
9.3. Size:542K st
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9.4. Size:388K st
stp2n60.pdf
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9.5. Size:1284K st
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9.6. Size:1136K st
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9.7. Size:453K st
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9.8. Size:1255K st
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9.9. Size:111K st
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9.10. Size:1117K st
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9.11. Size:634K st
stp2nc70z.pdf
STP2NC70Z, STP2NC70ZFPSTD1NC70Z, STD1NC70Z-1N-CHANNEL 700V - 7.3 - 1.4A TO-220/FP/DPAK/IPAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) ID PwSTP2NC70Z 700 V
9.12. Size:334K st
stp2nc60.pdf
STP2NC60STP2NC60FPN-CHANNEL 600V - 7 - 1.9A - TO-220/TO-220FPPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTP2NC60 600 V
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