All MOSFET. LSGN085R065W3 Datasheet

 

LSGN085R065W3 Datasheet and Replacement


   Type Designator: LSGN085R065W3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 138 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 601 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: DFN5X6
 

 LSGN085R065W3 substitution

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LSGN085R065W3 Datasheet (PDF)

 ..1. Size:1291K  1
 lsgn085r065w3.pdf pdf_icon

LSGN085R065W3

LSGC085R065W3\LSGE085R065W3\LSGN085R065W3Lonten N-channel 85 V, 80A, 6.5m Power MOSFETFeatures Product SummaryVDS 85V Extremely low on-resistance RDS(on)RDS(on) 6.5m Excellent Q xR product(FOM)g DS(on)ID 80A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested10

 ..2. Size:1291K  lonten
 lsgc085r065w3 lsge085r065w3 lsgn085r065w3.pdf pdf_icon

LSGN085R065W3

LSGC085R065W3\LSGE085R065W3\LSGN085R065W3Lonten N-channel 85 V, 80A, 6.5m Power MOSFETFeatures Product SummaryVDS 85V Extremely low on-resistance RDS(on)RDS(on) 6.5m Excellent Q xR product(FOM)g DS(on)ID 80A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested10

 9.1. Size:749K  1
 lsgn03r020.pdf pdf_icon

LSGN085R065W3

LSGN03R020/LSGG03R020/LSGC03R020Lonten N-channel 30V, 120A, 2.0m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 30VDSSeffect transistors are using split gate trench DMOS RDS(on),max@ V =10V 2.0mGStechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching perf

 9.2. Size:746K  1
 lsgn04r025.pdf pdf_icon

LSGN085R065W3

LSGN04R025/LSGC04R025Lonten N-channel 40V, 120A, 2.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.5mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching performance, and

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Datasheet: LSGH08R060W3 , LSGH10R085W3 , LSGN03R020 , LSGN04R025 , LSGN04R029 , LSGN04R035 , LSGN06R034W3 , LSGN06R098W3 , IRFP260N , LSGN10R085W3 , LSH50R160HT , LSH60R1K4HT , LSH60R240HT , LSH60R280HT , LSH60R290HF , LSH60R2K5HT , LSH60R380HT .

History: 2SK1162 | APM4050APUC | SPD01N60C3 | UF830KL-TN3-R | SI2300DS | OSG60R099FT3F | AOI4286

Keywords - LSGN085R065W3 MOSFET datasheet

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