LSGN085R065W3 Datasheet and Replacement
Type Designator: LSGN085R065W3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 138
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 80
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 55
nC
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 601
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065
Ohm
Package:
DFN5X6
- MOSFET Cross-Reference Search
LSGN085R065W3 Datasheet (PDF)
..1. Size:1291K 1
lsgn085r065w3.pdf 
LSGC085R065W3\LSGE085R065W3\LSGN085R065W3Lonten N-channel 85 V, 80A, 6.5m Power MOSFETFeatures Product SummaryVDS 85V Extremely low on-resistance RDS(on)RDS(on) 6.5m Excellent Q xR product(FOM)g DS(on)ID 80A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested10
..2. Size:1291K lonten
lsgc085r065w3 lsge085r065w3 lsgn085r065w3.pdf
LSGC085R065W3\LSGE085R065W3\LSGN085R065W3Lonten N-channel 85 V, 80A, 6.5m Power MOSFETFeatures Product SummaryVDS 85V Extremely low on-resistance RDS(on)RDS(on) 6.5m Excellent Q xR product(FOM)g DS(on)ID 80A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested10
9.1. Size:749K 1
lsgn03r020.pdf
LSGN03R020/LSGG03R020/LSGC03R020Lonten N-channel 30V, 120A, 2.0m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 30VDSSeffect transistors are using split gate trench DMOS RDS(on),max@ V =10V 2.0mGStechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching perf
9.2. Size:746K 1
lsgn04r025.pdf
LSGN04R025/LSGC04R025Lonten N-channel 40V, 120A, 2.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.5mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching performance, and
9.3. Size:917K 1
lsgn06r098w3.pdf
LSGG06R098W3/LSGN06R098W3Lonten N-channel 60V, 80A, 9.8m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using split gate trench DMOS RDS(on).max@ V =10V 9.8mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance,
9.4. Size:1070K 1
lsgn04r029.pdf
LSGC04R029/LSGG04R029/LSGH04R029/LSGN04R029Lonten N-channel 40V, 120A, 2.9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.9mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior swit
9.5. Size:746K lonten
lsgn04r025 lsgc04r025.pdf
LSGN04R025/LSGC04R025Lonten N-channel 40V, 120A, 2.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.5mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching performance, and
9.6. Size:749K lonten
lsgn03r020 lsgg03r020 lsgc03r020.pdf
LSGN03R020/LSGG03R020/LSGC03R020Lonten N-channel 30V, 120A, 2.0m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 30VDSSeffect transistors are using split gate trench DMOS RDS(on),max@ V =10V 2.0mGStechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching perf
9.7. Size:911K lonten
lsgg06r098w3 lsgn06r098w3.pdf
LSGG06R098W3/LSGN06R098W3Lonten N-channel 60V, 80A, 9.8m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using split gate trench DMOS RDS(on).max@ V =10V 9.8mGStechnology. This advanced technology has been I 80ADespecially tailored to minimize on-state resistance,provide superior switching performance,
9.8. Size:813K lonten
lsgc06r034w3 lsge06r034w3 lsgn06r034w3 lsgg06r034w3.pdf
LSGC06R034W3\LSGE06R034W3\LSGN06R034W3\LSGG06R034W3Lonten N-channel 60 V, 80 A, 3.4m Power MOSFETFeatures Product SummaryVDS 60V Extremely low on-resistance RDS(on)RDS(on)@10V typ 2.8m Excellent Q xR product(FOM)g DS(on)RDS(on)@4.5V typ 3.6m Qualified according to JEDEC criteriaID 80AApplications Synchronous Rectification for AC/DC QuickCharger1
9.9. Size:933K lonten
lsgc04r035 lsgd04r035 lsge04r035 lsgg04r035 lsgh04r035 lsgn04r035.pdf
LSGC04R035/LSGD04R035/LSGE04R035/LSGG04R035/LSGH04R035/LSGN04R035Lonten N-channel 40V, 120A, 3.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 3.5mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance
9.10. Size:1070K lonten
lsgc04r029 lsgg04r029 lsgh04r029 lsgn04r029.pdf
LSGC04R029/LSGG04R029/LSGH04R029/LSGN04R029Lonten N-channel 40V, 120A, 2.9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.9mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior swit
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History: TK2P60D
| IRFBG20
Keywords - LSGN085R065W3 MOSFET datasheet
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