LSH70R450GT Datasheet and Replacement
Type Designator: LSH70R450GT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 460 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO-251
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LSH70R450GT Datasheet (PDF)
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LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT LonFET Lonten N-channel 700V, 11A, 0.45 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 750V advanced super junction technology. The RDS(on),max 0.45 resulting device has extremely low on resistance, IDM 30A making it especially suitable for applications which
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LSD70R1KGT/LSG70R1KGT/ LSH70R1KGT LonFET Lonten N-channel 700V, 4A, 1.08 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 750V advanced super junction technology. The RDS(on),max 1.08 resulting device has extremely low on IDM 12A resistance, making it especially suitable for Qg,typ 13nC applications which require super
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LSC70R640GT/LSD70R640GT/LSG70R640GT/ LSH70R640GT/LSF70R640GT LonFET Lonten N-channel 700V, 7A, 0.64 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 750V advanced super junction technology. The resulting RDS(on),max 0.64 device has extremely low on resistance, making it IDM 21A especially suitable for applications whic
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: AP09N20BGH-HF | ZVP3310ASTOB | IRFB38N20D | IRFBA1404 | IXFK24N80P | SI4010DY | RJK5015DPK
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History: AP09N20BGH-HF | ZVP3310ASTOB | IRFB38N20D | IRFBA1404 | IXFK24N80P | SI4010DY | RJK5015DPK



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