LSH70R640GT MOSFET. Datasheet pdf. Equivalent
Type Designator: LSH70R640GT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15.2 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 23 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.64 Ohm
Package: TO-251
LSH70R640GT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
LSH70R640GT Datasheet (PDF)
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