All MOSFET. LSH70R640GT Datasheet

 

LSH70R640GT MOSFET. Datasheet pdf. Equivalent


   Type Designator: LSH70R640GT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15.2 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.64 Ohm
   Package: TO-251

 LSH70R640GT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LSH70R640GT Datasheet (PDF)

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 lsc70r640gt lsd70r640gt lsg70r640gt lsh70r640gt lsf70r640gt.pdf

LSH70R640GT LSH70R640GT

LSC70R640GT/LSD70R640GT/LSG70R640GT/ LSH70R640GT/LSF70R640GT LonFET Lonten N-channel 700V, 7A, 0.64 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 750V advanced super junction technology. The resulting RDS(on),max 0.64 device has extremely low on resistance, making it IDM 21A especially suitable for applications whic

 8.1. Size:1160K  lonten
 lsd70r1kgt lsg70r1kgt lsh70r1kgt.pdf

LSH70R640GT LSH70R640GT

LSD70R1KGT/LSG70R1KGT/ LSH70R1KGT LonFET Lonten N-channel 700V, 4A, 1.08 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 750V advanced super junction technology. The RDS(on),max 1.08 resulting device has extremely low on IDM 12A resistance, making it especially suitable for Qg,typ 13nC applications which require super

 8.2. Size:1179K  lonten
 lsd70r450gt lse70r450gt lsf70r450gt lsg70r450gt lsh70r450gt.pdf

LSH70R640GT LSH70R640GT

LSD70R450GT/LSE70R450GT/LSF70R450GT/LSG70R450GT/LSH70R450GT LonFET Lonten N-channel 700V, 11A, 0.45 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 750V advanced super junction technology. The RDS(on),max 0.45 resulting device has extremely low on resistance, IDM 30A making it especially suitable for applications which

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXFX13N100

 

 
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