SI2302AI-MS MOSFET. Datasheet pdf. Equivalent
Type Designator: SI2302AI-MS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 2.7 nC
trⓘ - Rise Time: 3.1 nS
Cossⓘ - Output Capacitance: 45 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOT23
SI2302AI-MS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI2302AI-MS Datasheet (PDF)
si2302ai-ms.pdf
www.msksemi.comSI2302AI-MSSemiconductor CompianceGeneral Features V = 20V,I = 3 ADS DR
si2302ad.pdf
Si2302ADSVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.060 at VGS = 4.5 V 2.4 Compliant to RoHS Directive 2002/95/EC200.115 at VGS = 2.5 V 2.0TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302ADS (2A)* * Marking CodeOrdering Information: Si2302ADS-T1-E3 (
si2302ads-t1 si2302ads.pdf
Si2302ADSVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.060 at VGS = 4.5 V 2.4 100 % Rg Tested20 Compliant to RoHS Directive 2002/95/EC0.115 at VGS = 2.5 V 2.0TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302ADS (2A)* * Marking CodeOrdering Informatio
si2302a.pdf
SI2302AFeatures Rugged and Reliable Lead Free Product is Acquired High Dense Cell Design for Extremely Low RDS(ON) N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Enhancement Mode Halogen Free Available Upon Request by Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Field Effect Transistor
si2302a.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SI2302AN-Channel 1.25-W, 2.5-V MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.040 @ VGS = 4.5 V 3.020200.060 @ V 2.0GS = 2.5 V(SOT-23)G 13 DS 2Top View(A2)*SI2302AABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 20VVGate-Source Voltage VG
si2302a.pdf
RUMW UMW SI2302AUMW SI2302AUMW SI2302AN-Channel Enhancement MOSFET FeaturesSOT23 VDS=20V RDS(on)= 85m@VGS=4.5V ,ID=3.6A RDS(on)= 115m@VGS=2.5V ,ID=3.1A Marking1. GATE 2. SOURCE G 1 3. DRAIN 3 DS 2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 20V Gate-Source Voltage VGS 8 Ta=25 2.
si2302a.pdf
SOT-23 Plastic-Encapsulate MOSFETSSI2302AN-Channel 20-V(D-S) MOSFETSI2302AV(BR)DSS RDS(on)MAX IDSOT-230.040@ 4.5V320V 3A1.GATE0.050@ 2.5V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETLead free product is acquired Equivalent CircuitMARKINGSurface mount packageA2 wAPPLICATIONLoad Switch for Portable DevicesDC/DC Converter*
si2302ads-t1.pdf
SI2302ADS-T1www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC C
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
