All MOSFET. STP32N05LFI Datasheet

 

STP32N05LFI Datasheet and Replacement


   Type Designator: STP32N05LFI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 430 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: ISOWATT220
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STP32N05LFI Datasheet (PDF)

 5.1. Size:393K  st
 stp32n05l.pdf pdf_icon

STP32N05LFI

STP32N05LSTP32N05LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP32N05L 50 V

 7.1. Size:201K  st
 stp32n06.pdf pdf_icon

STP32N05LFI

STP32N06LSTP32N06LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP32N06L 60 V

 7.2. Size:393K  st
 stp32n06l.pdf pdf_icon

STP32N05LFI

STP32N06LSTP32N06LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP32N06L 60 V

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History: WMM11N80M3 | IRFI7536G | RFP2N10L | FDMS9620S | AM2314NE

Keywords - STP32N05LFI MOSFET datasheet

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