All MOSFET. MEM4N60K3G Datasheet

 

MEM4N60K3G MOSFET. Datasheet pdf. Equivalent


   Type Designator: MEM4N60K3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15.6 nC
   trⓘ - Rise Time: 13.2 nS
   Cossⓘ - Output Capacitance: 92.1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO252

 MEM4N60K3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MEM4N60K3G Datasheet (PDF)

 ..1. Size:722K  microne
 mem4n60thdg mem4n60thg mem4n60k3g mem4n60a3g.pdf

MEM4N60K3G MEM4N60K3G

MEM4N60 N-CHANNEL POWER MOSFET MEM4N60 General Description Features 600V4A Switching regulator application. RDS(ON)=2.3@VGS=10V High voltage and high speed. LOW CRSS Switching application. FAST SWITCHING PACKAGE :TO251,TO251S,TO252,TO-220F Pin Configuration MEM4N60THDG MEM4N60THG MEM4N60K3G MEM4N60A3G Maximum Ratings (Ta=25) P

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFU3709Z | IXFN26N90 | IXFH88N20Q | TSM2NB60CI | ZVN3306ASTZ | 2SJ539 | HUFA76423S3S

 

 
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