All MOSFET. MCU20N15 Datasheet

 

MCU20N15 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MCU20N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 74.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TO252

 MCU20N15 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MCU20N15 Datasheet (PDF)

 ..1. Size:799K  mcc
 mcu20n15.pdf

MCU20N15 MCU20N15

MCU20N15Features Excellent Gate Charge x RDS(on) Product(FOM) Very Low On-Resistance RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum RatingsOpe

 8.1. Size:875K  mcc
 mcu20n06.pdf

MCU20N15 MCU20N15

MCU20N06Features High Density Cell Design for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Excellent Package for Good Heat Dissipation Special Process Technology for High ESD CapabilityN-CHANNEL Epoxy Meets UL 94 V-0 Flammability RatingMOSFET Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"

 8.2. Size:881K  mcc
 mcu20n06b.pdf

MCU20N15 MCU20N15

MCU20N06BFeatures High Density Cell Design for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Excellent Package for Good Heat Dissipation Special Process Technology for High ESD CapabilityN-CHANNEL Epoxy Meets UL 94 V-0 Flammability RatingMOSFET Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"

 8.3. Size:877K  mcc
 mcu20n06a.pdf

MCU20N15 MCU20N15

MCU20N06AFeatures High Density Cell Design for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Excellent Package for Good Heat Dissipation Special Process Technology for High ESD CapabilityN-CHANNEL Epoxy Meets UL 94 V-0 Flammability RatingMOSFET Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2N6845

 

 
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