SI3134KL3 Datasheet and Replacement
Type Designator: SI3134KL3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 13 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: DFN1006-3
SI3134KL3 substitution
SI3134KL3 Datasheet (PDF)
si3134kl3.pdf

SI3134KL3Features Operated at Low Logic Level Gate Drive N-Channel Switch with Low RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1N-Channel MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Operat
si3134k.pdf

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsSI3134KCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Product is Acquired Halogen free available upon request by adding suffix "-HF" Epoxy meets UL 94 V-0 flammability ratingN-Channel MOSFET Moisture Sensitivity Level 1 Operated at Low Logi
Datasheet: MSJU11N65 , SI1012 , SI2101 , SI2310A , SI2310B , SI2312B , SI2324A , SI3134KDW , 20N50 , SI3139KE , SI3139KL3 , SI3400A , SI3401A , SI3402 , SI3407 , SI3415A , SI3415B .
History: HY6N60T | BSZ018N04LS6 | AP20T15GM-HF | AONV420A70 | AONR36328 | UT100N03-Q | FDM606P
Keywords - SI3134KL3 MOSFET datasheet
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History: HY6N60T | BSZ018N04LS6 | AP20T15GM-HF | AONV420A70 | AONR36328 | UT100N03-Q | FDM606P



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