SI3415A Datasheet and Replacement
Type Designator: SI3415A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 165 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOT23
SI3415A substitution
SI3415A Datasheet (PDF)
si3415a.pdf
SI3415AFeatures High Power and Current Handing Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1)P-Channel Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55oC to +150oC
si3415b.pdf
SI3415BFeatures High Density Cell Design For Ultra Low RDS(on) High Speed SwitchingP-Channel ESD Protected Up to 2.5KV (HBM) Trench Power LV MOSFET TechnologyEnhancement Mode Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Field Effect Transistor Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoH
Datasheet: SI3134KDW , SI3134KL3 , SI3139KE , SI3139KL3 , SI3400A , SI3401A , SI3402 , SI3407 , P0903BDG , SI3415B , SI3420A , SIL03N10 , SIL05N06 , SIL2300 , SIL2301 , SIL2308 , SIL2322A .
History: BRF20N60
Keywords - SI3415A MOSFET datasheet
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SI3415A replacement
History: BRF20N60
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