All MOSFET. STP36N06LFI Datasheet

 

STP36N06LFI Datasheet and Replacement


   Type Designator: STP36N06LFI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 35 nC
   tr ⓘ - Rise Time: 550 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: ISOWATT220
 

 STP36N06LFI substitution

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STP36N06LFI Datasheet (PDF)

 5.1. Size:401K  st
 stp36n06l.pdf pdf_icon

STP36N06LFI

STP36N06LSTP36N06LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP36N05L 60 V

 6.1. Size:414K  st
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STP36N06LFI

STP36N06STP36N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP36N06 60 V

 7.1. Size:396K  st
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STP36N06LFI

STP36N05LSTP36N05LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP36N05L 50 V

 7.2. Size:204K  st
 stp36n05.pdf pdf_icon

STP36N06LFI

STP36N05LSTP36N05LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP36N05L 50 V

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Keywords - STP36N06LFI MOSFET datasheet

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