EFC2J004NUZ Datasheet and Replacement
Type Designator: EFC2J004NUZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35000 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0071 Ohm
Package: WLCSP6
EFC2J004NUZ substitution
EFC2J004NUZ Datasheet (PDF)
efc2j004nuz.pdf

EFC2J004NUZ Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 7.1 m, 14 A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-cell lithium-ion battery applications. VSSS RSS(on) Max IS Max 7.1 m @ 4.5 V Features 7.7 m
efc2j013nuz.pdf

EFC2J013NUZPower MOSFETfor 1Cell LithiumionBattery Protection12 V, 5.8 mW, 17 A, Dual N-Channelwww.onsemi.comThis Power MOSFET features a low on-state resistance. This deviceis suitable for applications such as power switches of portableVSSS RSS(ON) MAX IS MAXmachines. Best suited for 1-cell lithium-ion battery applications.12 V 5.8 mW @ 4.5 V 17 AFeatures6.2 mW @
Datasheet: P1825HDB , PA910BD , PK501BA , PK537BA , PK650DY , PKCH2BB , BSS123LT1G , BVSS123LT1G , STP65NF06 , EFC2J013NUZ , EFC2K101NUZ , EFC2K103NUZ , EFC2K107NUZ , EFC3C001NUZ , EFC4C002NL , EFC4K105NUZ , EFC4K110NUZ .
History: FCP850N80Z | SHD230704
Keywords - EFC2J004NUZ MOSFET datasheet
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History: FCP850N80Z | SHD230704



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