EFC2K107NUZ MOSFET. Datasheet pdf. Equivalent
Type Designator: EFC2K107NUZ
Marking Code: NY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 36000 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00285 Ohm
Package: WLCSP10
EFC2K107NUZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
EFC2K107NUZ Datasheet (PDF)
efc2k107nuz.pdf
EFC2K107NUZMOSFET Power, Dual,N-Channel, for 1-CellLithium-ion BatteryProtectionwww.onsemi.com12 V, 2.85 mW, 20 AThis Power MOSFET features a low on-state resistance. This deviceVSSS RSS(ON) MAX IS MAXis suitable for applications such as power switches of portable12 V 2.85 mW @ 4.5 V 20 Amachines. Best suited for 1-cell lithium-ion battery applications.3.1 mW @ 3.8 V
efc2k101nuz.pdf
EFC2K101NUZPower MOSFETfor 1Cell LithiumionBattery Protection12 V, 6.2 mW, 15 A, Dual N-Channelwww.onsemi.comThis Power MOSFET features a low on-state resistance. This deviceis suitable for applications such as power switches of portableVSSS RSS(ON) MAX IS MAXmachines. Best suited for 1-cell lithium-ion battery applications.12 V 6.2 mW @ 4.5 V 15 AFeatures6.6 mW @
efc2k103nuz.pdf
MOSFET - Power for 1-CellLithium-ion BatteryProtectionEFC2K103NUZ12 V, 1.8 mW, 40 A, Dual N-Channelwww.onsemi.comThis power MOSFET features a low on-state resistance. Thisdevice is suitable for applications such as power switches of portableVSSS RSS(ON) MAX IS MAXmachines. Best suited for 1-cell lithium-ion battery applications.12 V 1.8 mW @ 4.5 V 40 AFeatures1.9 mW @ 3.
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