STP3N100 MOSFET. Datasheet pdf. Equivalent
Type Designator: STP3N100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 3.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 48 nC
trⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO220
STP3N100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP3N100 Datasheet (PDF)
stp3n100.pdf
STP3N100STP3N100FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP3N100 1000 V
stfw3n150 sth3n150-2 stp3n150 stw3n150.pdf
STFW3N150, STH3N150-2 STP3N150, STW3N150DatasheetN-channel 1500 V, 2.5 A, 6 typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packagesFeaturesTABVDS RDS(on) max. ID PTOTOrder codes23 1 3STFW3N150 63 W22H PAK-21STH3N150-2TO-3PF1500 V 9 2.5 ASTP3N150 140 WTABSTW3N15033 100% avalanche tested2 2 1 1 TO-220
stfw3n150 stp3n150 stw3n150.pdf
STFW3N150STP3N150, STW3N150N-channel 1500 V, 6 , 2.5 A, PowerMESH Power MOSFETin TO-220, TO-247, TO-3PFFeaturesRDS(on) Type VDSS ID PTOTmax.STFW3N150 1500 V
stp3n150.pdf
isc N-Channel MOSFET Transistor STP3N150FEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V = 1500V(Min)DSSStatic Drain-Source On-Resistance: R = 9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS
Datasheet: STP33N10FI , STP36N05L , STP36N05LFI , STP36N06 , STP36N06FI , STP36N06L , STP36N06LFI , STP38N06 , IRFB3306 , STP3N100FI , STP3N100XI , STP3N50XI , STP3N60FI , STP3N60XI , STP3N80XI , STP3N90 , STP3N90FI .
