All MOSFET. STP3N100 Datasheet

 

STP3N100 MOSFET. Datasheet pdf. Equivalent

Type Designator: STP3N100

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Drain Current |Id|: 3.5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 5 Ohm

Package: TO220

STP3N100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STP3N100 Datasheet (PDF)

1.1. stp3n100.pdf Size:366K _st

STP3N100
STP3N100

STP3N100 STP3N100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP3N100 1000 V < 5 ? 3.5 A STP3N100FI 1000 V < 5 ? 2 A AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE 3 3 LOW GATE CHARGE 2 2 1 1 APPLICATION ORIENTED CHARACTERIZATION TO-220 ISOWATT220 APPLICATIONS HIGH CURRENT, HIGH

4.1. stfw3n150 stp3n150 stw3n150.pdf Size:759K _st

STP3N100
STP3N100

STFW3N150 STP3N150, STW3N150 N-channel 1500 V, 6 ?, 2.5 A, PowerMESH Power MOSFET in TO-220, TO-247, TO-3PF Features RDS(on) Type VDSS ID PTOT max. STFW3N150 1500 V < 9 ? 2.5 A 63 W 3 2 1 STP3N150 1500 V < 9 ? 2.5 A 140 W TO-220 STW3N150 1500 V < 9 ? 2.5 A 140 W 100% avalanche tested Intrinsic capacitances and Qg minimized 3 3 2 High speed switching 2 1 1 TO-247 F

 5.1. stp3nb80 stp3nb80fp.pdf Size:103K _upd

STP3N100
STP3N100

STP3NB80 STP3NB80FP  N - CHANNEL 800V - 4.6Ω - 2.6A - TO-220/TO-220FP PowerMESH MOSFET TYPE VDSS RDS(on) ID STP3NB80 800 V < 6.5 Ω 2.6 A STP3NB80FP 800 V < 6.5 2.6 A Ω TYPICAL RDS(on) = 4.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH

5.2. stp3n80k5 stu3n80k5.pdf Size:1589K _upd

STP3N100
STP3N100

STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5 N-channel 800 V, 2.8 Ω typ., 2.5 A Zener-protected SuperMESH™ 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS(on)max ID PTOT 3 1 STD3N80K5 60 W DPAK STF3N80K5 20 W 3 800 V 3.5 Ω 2.5 A 2 1 TAB STP3N80K5 60 W TO-220FP STU3N80K5 TAB • TO-220 worldwide bes

 5.3. stp3nk50z.pdf Size:621K _upd

STP3N100
STP3N100

STP3NK50Z N-channel 500 V, 2.8 Ω typ., 2.3 A Zener-protected SuperMESH™ Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max. ID PTOT TAB STP3NK50Z 500 V 3.3 Ω 2.3 A 45 W • Extremely high dv/dt capability • ESD improved capability 3 2 1 • 100% avalanche tested TO-220 • Gate charge minimized • Zener-protected Applicatio

5.4. stp3nb100.pdf Size:109K _upd

STP3N100
STP3N100

STP3NB100 STP3NB100FP N-CHANNEL 1000V - 5.3Ω - 3A TO-220/TO-220FP PowerMesh™ MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP3NB100 1000 V < 6 Ω 3 A STP3NB100FP 1000 V < 6 Ω 3 A TYPICAL RDS(on) = 5.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 VERY LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION Using the lates

 5.5. stp3nk90zfp.pdf Size:438K _upd

STP3N100
STP3N100

STP3NK90Z - STP3NK90ZFP STD3NK90Z - STD3NK90Z-1 N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP3NK90Z 900 V < 4.8 Ω 3 A 90 W STP3NK90ZFP 900 V < 4.8 Ω 3 A 25 W STD3NK90Z 900 V < 4.8 Ω 3 A 90 W STD3NK90Z-1 900 V < 4.8 Ω 3 A 90 W 3 TYPICAL RDS(on) = 4.1 Ω 2 1 EXTREMELY HIGH dv/dt CAPABILITY TO-22

5.6. stp3na50.pdf Size:196K _upd

STP3N100
STP3N100

STP3NA50 STP3NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP3NA50 500 V < 3 Ω 3.3 A STP3NA50FI 500 V < 3 Ω 2.3 A TYPICAL RDS(on) = 2.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPRE

5.7. stp3nc60(fp).pdf Size:343K _st

STP3N100
STP3N100

STP3NC60 STP3NC60FP N-CHANNEL 600V - 3.3? - 3A TO-220/TO-220FP PowerMeshII MOSFET TYPE VDSS RDS(on) ID STP3NC60 600 V < 3.6 ? 3 A STP3NC60FP 600V < 3.6 ? 3 A TYPICAL RDS(on) = 3.3 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 2 2 NEW HIGH VOLTAGE BENCHMARK 1 1 GATE CHARGE MINIMIZED TO-220FP TO-220 DESCRIPTION The PowerMESHII is the evolution of the first gen

5.8. stp3nk60z.pdf Size:755K _st

STP3N100
STP3N100

STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3? - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESHPower MOSFET TYPE VDSS RDS(on) ID Pw STP3NK60Z 600 V < 3.6 ? 2.4 A 45 W STP3NK60ZFP 600 V < 3.6 ? 2.4 A 20 W STB3NK60Z 600 V < 3.6 ? 2.4 A 45 W STD3NK60Z 600 V < 3.6 ? 2.4 A 45 W 3 STD3NK60Z-1 600 V < 3.6 ? 2.4 A 45 W 2 1 TYPICAL RDS(on) = 3.3 ? TO

5.9. stp3n80.pdf Size:113K _st

STP3N100
STP3N100

STP3NB80 STP3NB80FP ? N - CHANNEL 800V - 4.6? - 2.6A - TO-220/TO-220FP PowerMESH? MOSFET TYPE VDSS RDS(on) ID STP3NB80 800 V < 6.5 ? 2.6 A STP3NB80FP 800 V < 6.5 ? 2.6 A(uu) TYPICAL R = 4.6 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY?

5.10. stp3nb80-fp.pdf Size:353K _st

STP3N100
STP3N100

STP3NB80 STP3NB80FP N - CHANNEL 800V - 4.6? - 2.6A - TO-220/TO-220FP PowerMESH? MOSFET TYPE VDSS RDS(on) ID STP3NB80 800 V < 6.5 ? 2.6 A STP3NB80FP 800 V < 6.5 ? 2.6 A TYPICAL R = 4.6 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? pr

5.11. stp3na90-.pdf Size:59K _st

STP3N100
STP3N100

STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(o n) D STP3NA90 900 V < 5.3 ? 3 A STP3NA90FI 900 V < 5.3 ? 1.9 A TYPICAL R = 4.4 ? DS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE CHARGE MINIMIZED REDUCED THRESHOLD VO

5.12. stp3nb60.pdf Size:352K _st

STP3N100
STP3N100

STP3NB60 STP3NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH? MOSFET TYPE VDSS RDS(on) ID STP3NB60 600 V <3.6 ? 3.3 A STP3NB60FP 600 V < 3.6 ? 2.2 A TYPICAL R = 3.3 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? process, SGS-Thomson has de

5.13. stf3nk100z stp3nk100z std3nk100z.pdf Size:424K _st

STP3N100
STP3N100

STF3NK100Z - STD3NK100Z STP3NK100Z N-channel 1000V - 5.4? - 2.5A - TO-220 - TO-220FP - DPAK Zener-protected SuperMESH Power MOSFET Features RDS(on) VDSS ID PTOT Type Max STF3NK100Z 1000V < 6? 2.5A 25W 3 3 2 2 1 1 STP3NK100Z 1000V < 6? 2.5A 90W TO-220 TO-220FP STD3NK100Z 1000V < 6? 2.5A 90W Extremely high dv/dt capability 3 1 100% avalanche tested DPAK Gate charge m

5.14. stp3na80.pdf Size:383K _st

STP3N100
STP3N100

STP3NA80 STP3NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP3NA80 800 V < 4.5 ? 3.1 A STP3NA80FI 800 V < 4.5 ? 2 A TYPICAL R = 3.5 ? DS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 I

5.15. stb3n62k3 std3n62k3 stf3n62k3 stp3n62k3 stu3n62k3.pdf Size:548K _st

STP3N100
STP3N100

STB3N62K3, STD3N62K3, STF3N62K3 STP3N62K3, STU3N62K3 N-channel 620 V, 2.2 ? , 2.7 A SuperMESH3 Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK Features RDS(on) 3 3 Type VDSS ID PD 2 1 max 1 DPAK STB3N62K3 620 V < 2.5 ? 2.7 A 45 W IPAK STD3N62K3 620 V < 2.5 ? 2.7 A 45 W STF3N62K3 620 V < 2.5 ? 2.7 A(1) 20 W 3 1 STP3N62K3 620 V < 2.5 ? 2.7 A 45 W D?PAK STU3N62K3 620 V < 2.5 ? 2.

5.16. stp3na60.pdf Size:436K _st

STP3N100
STP3N100

STP3NA60 STP3NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP3NA60 600 V < 4 ? 2.9 A STP3NA60FI 600 V < 4 ? 2.1 A TYPICAL R = 3.3 ? DS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220

5.17. stp3nk60z-fp stb3nk60z std3nk60z std3nk60z-1.pdf Size:757K _st

STP3N100
STP3N100

STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3? - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESHPower MOSFET TYPE VDSS RDS(on) ID Pw STP3NK60Z 600 V < 3.6 ? 2.4 A 45 W STP3NK60ZFP 600 V < 3.6 ? 2.4 A 20 W STB3NK60Z 600 V < 3.6 ? 2.4 A 45 W STD3NK60Z 600 V < 3.6 ? 2.4 A 45 W 3 STD3NK60Z-1 600 V < 3.6 ? 2.4 A 45 W 2 1 TYPICAL RDS(on) = 3.3 ? TO

5.18. stp3nb100.pdf Size:150K _st

STP3N100
STP3N100

STP3NB100 STP3NB100FP N-CHANNEL 1000V - 5.3? - 3A TO-220/TO-220FP PowerMesh MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP3NB100 1000 V < 6 ? 3 A STP3NB100FP 1000 V < 6 ? 3 A TYPICAL RDS(on) = 5.3? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 VERY LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION Using the latest high voltag

5.19. stp3nb80.pdf Size:346K _st

STP3N100
STP3N100

STP3NB80 STP3NB80FP N - CHANNEL 800V - 4.6? - 2.6A - TO-220/TO-220FP PowerMESH? MOSFET TYPE VDSS RDS(on) ID STP3NB80 800 V < 6.5 ? 2.6 A STP3NB80FP 800 V < 6.5 ? 2.6 A TYPICAL R = 4.6 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? pr

5.20. stp3nc90z.pdf Size:335K _st

STP3N100
STP3N100

STP3NC90Z - STP3NC90ZFP STB3NC90Z-1 N-CHANNEL 900V - 3.2? - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESHIII MOSFET TYPE VDSS RDS(on) ID STP3NC90Z/FP 900V < 3.5? 3.5 A STB3NC90Z-1 900V < 3.5? 3.5 A TYPICAL RDS(on) = 3.2? 3 2 EXTREMELY HIGH dv/dt AND CAPABILITY GATE 1 TO - SOURCE ZENER DIODES TO-220 TO-220FP 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHAR

5.21. stp3na100.pdf Size:365K _st

STP3N100
STP3N100

STP3NA100 STP3NA100FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP3NA100 1000 V <5 ? 3.5 A STP3NA100FI 1000 V < 5 ? 2 A TYPICAL R = 4.3 ? DS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES 3 3 GATE CHARGE MINIMIZED 2 2 REDUCED THRESHOLD VOLTAGE SPREAD 1 1 TO-220

5.22. std3nk80z std3nk80z-1 stf3nk80z stp3nk80z.pdf Size:882K _st

STP3N100
STP3N100

STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 ?, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH Power MOSFET Features VDSS Type RDS(on) ID (@Tjmax) STP3NK80Z 800 V < 4.5 ? 2.5 A 3 2 1 STF3NK80Z 800 V < 4.5 ? 2.5 A TO-220FP TO-220 STD3NK80Z 800 V < 4.5 ? 2.5 A STD3NK80Z-1 800 V < 4.5 ? 2.5 A Extremely high dv/dt capability 3 3 2 1 100% a

5.23. stp3nc70z.pdf Size:324K _st

STP3N100
STP3N100

STP3NC70Z STP3NC70ZFP N-CHANNEL 700V - 4.1? - 2.5A TO-220/TO-220FP Zener-Protected PowerMESHIII MOSFET TYPE VDSS RDS(on) ID STP3NC70Z 700V < 4.7? 2.5 A STP3NC70ZFP 700V < 4.7? 2.5 A TYPICAL RDS(on) = 4.1? EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 3 100% AVALANCHE TESTED 2 1 VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPT

5.24. stp3nb90.pdf Size:383K _st

STP3N100
STP3N100

STP3NB90 STP3NB90FP N-CHANNEL 900V - 4 ? - 3.5 A TO-220/TO-220FP PowerMesh MOSFET TYPE VDSS RDS(on) ID Pw STP3NB90 900 V <4.2? 3.5 A 110 W STP3NB90FP 900 V <4.2? 3.5 A 35 W TYPICAL RDS(on) = 4 ? EXTREMELY HIGH dv/dt CAPABILITY 3 100% AVALANCHE TESTED 3 2 2 1 1 GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES TO-220FP TO-220 DESCRIPTION Using the latest high voltage

5.25. stp3na90.pdf Size:111K _st

STP3N100
STP3N100

STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE VDSS RDS(on) ID STP3NA90 900 V < 5.3 ? 3 A STP3NA90FI 900 V < 5.3 ? 1.9 A TYPICAL R = 4.4 ? DS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTA

5.26. stp3na50.pdf Size:397K _st

STP3N100
STP3N100

STP3NA50 STP3NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP3NA50 500 V < 3 ? 3.3 A STP3NA50FI 500 V < 3 ? 2.3 A TYPICAL R = 2.4 ? DS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220

5.27. stp3nc50.pdf Size:238K _st

STP3N100
STP3N100

STP3NC50 N-CHANNEL 500V - 3? - 2.8A TO-220 PowerMeshII MOSFET TYPE VDSS RDS(on) ID STP3NC50 500 V < 4 ? 2.8 A TYPICAL RDS(on) = 3 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 2 DESCRIPTION 1 The PowerMESHII is the evolution of the first TO-220 generation of MESH OVERLAY. The layout re- finements introduced great

5.28. stp3nk90z stp3nk90zfp std3nk90z std3nk90z-1.pdf Size:613K _st

STP3N100
STP3N100

STP3NK90Z - STP3NK90ZFP STD3NK90Z - STD3NK90Z-1 N-CHANNEL 900V - 4.1? - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESHPower MOSFET TYPE VDSS RDS(on) ID Pw STP3NK90Z 900 V < 4.8 ? 3 A 90 W STP3NK90ZFP 900 V < 4.8 ? 3 A 25 W STD3NK90Z 900 V < 4.8 ? 3 A 90 W STD3NK90Z-1 900 V < 4.8 ? 3 A 90 W 3 TYPICAL RDS(on) = 4.1 ? 2 1 EXTREMELY HIGH dv/dt CAPABILITY TO-220 TO-220FP 100%

Datasheet: STP33N10FI , STP36N05L , STP36N05LFI , STP36N06 , STP36N06FI , STP36N06L , STP36N06LFI , STP38N06 , 40673 , STP3N100FI , STP3N100XI , STP3N50XI , STP3N60FI , STP3N60XI , STP3N80XI , STP3N90 , STP3N90FI .

 
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