FCB099N65S3 MOSFET. Datasheet pdf. Equivalent
Type Designator: FCB099N65S3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 227 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 61 nC
Rise Time (tr): 24 nS
Drain-Source Capacitance (Cd): 55 pF
Maximum Drain-Source On-State Resistance (Rds): 0.099 Ohm
Package: TO263
FCB099N65S3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FCB099N65S3 Datasheet (PDF)
..1. Size:323K onsemi
fcb099n65s3.pdf
fcb099n65s3.pdf
MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 30 A, 99 mWFCB099N65S3DescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored
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