All MOSFET. FCB099N65S3 Datasheet

 

FCB099N65S3 Datasheet and Replacement


   Type Designator: FCB099N65S3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 61 nC
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO263
 

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FCB099N65S3 Datasheet (PDF)

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FCB099N65S3

MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 30 A, 99 mWFCB099N65S3DescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored

Datasheet: EFC2K103NUZ , EFC2K107NUZ , EFC3C001NUZ , EFC4C002NL , EFC4K105NUZ , EFC4K110NUZ , EFC8811R , FCB070N65S3 , AO3407 , FCB125N65S3 , FCB260N65S3 , FCD360N65S3R0 , FCD600N65S3R0 , FCH023N65S3 , FCH041N65F-F085 , FCH072N60F-F085 , FCH077N65F-F085 .

History: 50N06AF

Keywords - FCB099N65S3 MOSFET datasheet

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