STP3N50XI MOSFET. Datasheet pdf. Equivalent
Type Designator: STP3N50XI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 25 nC
trⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: ISOWATT221
STP3N50XI Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP3N50XI Datasheet (PDF)
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stp3nc60-fp.pdf
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stp3nb80.pdf
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stp3nc90z.pdf
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stp3nc50.pdf
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stp3nk60z.pdf
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stp3nk60z-fp stb3nk60z std3nk60z std3nk60z-1.pdf
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isc N-Channel MOSFET Transistor STP3N150FEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V = 1500V(Min)DSSStatic Drain-Source On-Resistance: R = 9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS
Datasheet: STP36N06 , STP36N06FI , STP36N06L , STP36N06LFI , STP38N06 , STP3N100 , STP3N100FI , STP3N100XI , HY1906P , STP3N60FI , STP3N60XI , STP3N80XI , STP3N90 , STP3N90FI , STP3NA50FI , STP3NA80 , STP3NA80FI .
