STP3N60XI Datasheet and Replacement

   Type Designator: STP3N60XI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: ISOWATT221

STP3N60XI substitution

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STP3N60XI Datasheet (PDF)

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STB3N62K3, STD3N62K3, STF3N62K3STP3N62K3, STU3N62K3N-channel 620 V, 2.2 , 2.7 A SuperMESH3 Power MOSFETD2PAK, DPAK, TO-220FP, TO-220, IPAKFeaturesRDS(on) 33Type VDSS ID PD21max1DPAKSTB3N62K3 620 V

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STF3NK100Z - STD3NK100ZSTP3NK100ZN-channel 1000V - 5.4 - 2.5A - TO-220 - TO-220FP - DPAKZener-protected SuperMESH Power MOSFETFeaturesRDS(on) VDSS ID PTOTTypeMaxSTF3NK100Z 1000V

9.2. Size:424K st
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STF3NK100Z - STD3NK100ZSTP3NK100ZN-channel 1000V - 5.4 - 2.5A - TO-220 - TO-220FP - DPAKZener-protected SuperMESH Power MOSFETFeaturesRDS(on) VDSS ID PTOTTypeMaxSTF3NK100Z 1000V

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STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4STP3NK60Z, STP3NK60ZFPDatasheetN-channel 600 V, 3.2 typ., 2.4 A SuperMESH Power MOSFETs in DPAK, IPAK, DPAK, TO-220 and TO-220FP packagesFeaturesTABTAB3VDS RDS(on) max. IDOrder codes Package2311D2PAKIPAKTABSTB3NK60ZT4D2PAK2 3TAB1STD3NK60Z-1 IPAKDPAK600 V 3.6 2.4 ASTD3NK60ZT4 DPAK3STP3NK60Z TO

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STP3NB80STP3NB80FP N - CHANNEL 800V - 4.6 - 2.6A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP3NB80 800 V

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PCBSTD3NK90Z, STP3NK90Z, STP3NK90ZFPN-channel 900 V, 4.1 typ., 3 A Zener-protected SuperMESH Power MOSFET in DPAK, TO-220 and TO-220FP packagesDatasheet - production dataFeaturesTABTAB2Order codes VDS RDS(on) ID PTOT 31STD3NK90ZT4390 W 2DPAK1STP3NK90Z 900 V 4.8 3 ATO-220STP3NK90ZFP 25 W Extremely high

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9.17. Size:346K st
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STP3NB80STP3NB80FP N - CHANNEL 800V - 4.6 - 2.6A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP3NB80 800 V

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STP3NC90Z - STP3NC90ZFPSTB3NC90Z-1N-CHANNEL 900V - 3.2 - 3.5A TO-220/TO-220FP/I2PAKZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP3NC90Z/FP 900V

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STP3NK60Z - STP3NK60ZFPSTB3NK60Z-STD3NK60Z-STD3NK60Z-1N-CHANNEL 600V - 3.3 - 2.4A TO-220/FP/D2PAK/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP3NK60Z 600 V

9.22. Size:438K st
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STP3NK90Z - STP3NK90ZFPSTD3NK90Z - STD3NK90Z-1N-CHANNEL 900V - 4.1 - 3A TO-220/TO-220FP/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP3NK90Z 900 V

9.23. Size:672K st
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9.25. Size:613K st
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STP3NK90Z - STP3NK90ZFPSTD3NK90Z - STD3NK90Z-1N-CHANNEL 900V - 4.1 - 3A TO-220/TO-220FP/DPAK/IPAKZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP3NK90Z 900 V

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STP3NC70ZSTP3NC70ZFPN-CHANNEL 700V - 4.1 - 2.5A TO-220/TO-220FPZener-Protected PowerMESHIII MOSFETTYPE VDSS RDS(on) IDSTP3NC70Z 700V

9.28. Size:757K st
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9.29. Size:383K st
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STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 typ., 2.5 A SuperMESH Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages Datasheet - production data Features Order code V R I DS DS(on) max. DSTD3NK80Z-1 800 V 4.5 2.5 A STD3NK80ZT4 800 V 4.5 2.5 A STF3NK80Z 800 V 4.5 2.5 A STP3NK80Z 800 V 4.5 2.5 A Extremely high dv/dt capabil

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STP3NB80STP3NB80FP N - CHANNEL 800V - 4.6 - 2.6A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP3NB80 800 V

9.33. Size:352K st
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STP3NB60STP3NB60FPN - CHANNEL ENHANCEMENT MODEPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP3NB60 600 V

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9.35. Size:113K st
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STP3NB80STP3NB80FP N - CHANNEL 800V - 4.6 - 2.6A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP3NB80 800 V

9.36. Size:1589K st
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STP3NA100STP3NA100FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP3NA100 1000 V

9.39. Size:842K cn vbsemi
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STP3NK60ZFPwww.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 2.1RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoH

9.40. Size:262K inchange semiconductor
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isc N-Channel MOSFET Transistor STP3N150FEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V = 1500V(Min)DSSStatic Drain-Source On-Resistance: R = 9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .