FDB2552_F085
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDB2552_F085
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 37
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 39
nC
trⓘ - Rise Time: 29
nS
Cossⓘ -
Output Capacitance: 285
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036
Ohm
Package:
TO263AB
FDB2552_F085
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDB2552_F085
Datasheet (PDF)
..1. Size:416K fairchild semi
fdb2552 f085.pdf
April 2012FDB2552_F085N-Channel PowerTrench MOSFET150V, 37A, 36mFeatures Applications rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A DC/DC Converters and Off-line UPS Qg(tot) = 39nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifie
..2. Size:530K onsemi
fdb2552 f085.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
5.1. Size:256K fairchild semi
fdb2552 fdp2552.pdf
October 2002FDB2552 / FDP2552N-Channel PowerTrench MOSFET150V, 37A, 36mFeatures Applications rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A DC/DC Converters and Off-line UPS Qg(tot) = 39nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous R
9.1. Size:269K fairchild semi
fdb2572 fdp2572.pdf
September 2002FDB2572 / FDP2572N-Channel PowerTrench MOSFET150V, 29A, 54mFeatures Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchrono
9.2. Size:205K fairchild semi
fdb2532 f085.pdf
September 2010FDB2532_F085N-Channel PowerTrench MOSFET150V, 79A, 16mFeatures Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A DC/DC converters and Off-Line UPS Qg(tot) = 82nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rec
9.3. Size:275K fairchild semi
fdb2532 fdp2532 fdi2532.pdf
August 2002FDB2532 / FDP2532 / FDI2532N-Channel PowerTrench MOSFET150V, 79A, 16mFeatures Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A DC/DC converters and Off-Line UPS Qg(tot) = 82nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage S
9.4. Size:1144K onsemi
fdp2532 fdb2532.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.5. Size:405K onsemi
fdb2572.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.6. Size:1142K onsemi
fdb2532-f085.pdf
MOSFET N-Channel,POWERTRENCH)150 V, 79 A, 16 mWFDB2532-F085Featureswww.onsemi.com RDS(ON) = 14 mW (Typ.), VGS = 10 V, ID = 33 A Qg (tot) = 82 nC (Typ.), VGS = 10 VD Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse)G AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantSA
9.7. Size:138K tysemi
fdb2570.pdf
SMD TypeSMD TypeSMD TypeSMD TypeProduct specificationKDB2570(FDB2570)TO-263Unit: mmFeatures22 A, 150 V. RDS(ON) =80 m @VGS =10 V +0.24.57-0.2+0.11.27-0.1RDS(ON) =90m @VGS =6VLow gate chargeFast switching speed+0.10.1max1.27-0.1High performance trench technology for extremelylow RDS(ON)+0.10.81-0.12.54 1Gate+0.22Drain2.54-0.2 +0.1 +0.25.08-0.
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