All MOSFET. FDB86563-F085 Datasheet

 

FDB86563-F085 Datasheet and Replacement


   Type Designator: FDB86563-F085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 2355 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: TO263
 

 FDB86563-F085 substitution

   - MOSFET ⓘ Cross-Reference Search

 

FDB86563-F085 Datasheet (PDF)

 ..1. Size:451K  onsemi
fdb86563-f085.pdf pdf_icon

FDB86563-F085

FDB86563-F085N-Channel PowerTrench MOSFET 60 V, 110 A, 1.8 mDDFeatures Typical RDS(on) = 1.6 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A UIS CapabilityG RoHS CompliantGS Qualified to AEC Q101TO-263SApplicationsFDB SERIES Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter

 6.1. Size:468K  fairchild semi
fdb86563 f085.pdf pdf_icon

FDB86563-F085

December 2014FDB86563_F085N-Channel PowerTrench MOSFET60 V, 110 A, 1.8 m Features Typical RDS(on) = 1.6 m at VGS = 10V, ID = 80 A DD Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101GApplications GS Automotive Engine ControlTO-263S PowerTrain ManagementFDB SERIES Solenoid and Motor Drivers

 7.1. Size:440K  onsemi
fdb86566-f085.pdf pdf_icon

FDB86563-F085

FDB86566-F085DDN-Channel PowerTrench MOSFET 60 V, 110 A, 2.7 mGFeaturesGS Typical RDS(on) = 2.2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 80 nC at VGS = 10V, ID = 80 ATO-263S UIS CapabilityFDB SERIES RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/

 7.2. Size:4057K  onsemi
fdb86569-f085.pdf pdf_icon

FDB86563-F085

MOSFET N-Channel,POWERTRENCH)60 V, 80 A, 5.6 mWFDB86569-F085Featureswww.onsemi.com Typical RDS(on) = 4.4 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 35 nC at VGS = 10 V, ID = 80 AD UIS Capability These Device is Pb-Free and is RoHS Compliant Qualified to AEC-Q101GApplications Automotive Engine ControlS PowerTrain ManagementD2PAK-3

Datasheet: FDB2552_F085 , FDB28N30 , FDB3632-F085 , FDB3652-F085 , FDB3672-F085 , FDB86360-F085 , FDB86363-F085 , FDB86366-F085 , IRFZ24N , FDB86566-F085 , FDB86569-F085 , FDB9403-F085 , FDB9403L-F085 , FDB9406-F085 , FDB9406L-F085 , FDB9409-F085 , FDB9409L-F085 .

History: 12N90

Keywords - FDB86563-F085 MOSFET datasheet

 FDB86563-F085 cross reference
 FDB86563-F085 equivalent finder
 FDB86563-F085 lookup
 FDB86563-F085 substitution
 FDB86563-F085 replacement

 

 
Back to Top

 


 
.