STP3N90FI MOSFET. Datasheet pdf. Equivalent
Type Designator: STP3N90FI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 42 nC
trⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 82 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
Package: ISOWATT220
STP3N90FI Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP3N90FI Datasheet (PDF)
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stp3na50.pdf
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stp3nc60-fp.pdf
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stp3nb80.pdf
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stp3nc90z.pdf
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stp3nc50.pdf
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stp3nk60z.pdf
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stp3nk60z-fp stb3nk60z std3nk60z std3nk60z-1.pdf
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stp3n150.pdf
isc N-Channel MOSFET Transistor STP3N150FEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V = 1500V(Min)DSSStatic Drain-Source On-Resistance: R = 9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS
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