All MOSFET. FDD86567-F085 Datasheet

 

FDD86567-F085 Datasheet and Replacement


   Type Designator: FDD86567-F085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 63 nC
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: TO252
 

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FDD86567-F085 Datasheet (PDF)

 ..1. Size:449K  onsemi
fdd86567-f085.pdf pdf_icon

FDD86567-F085

FDD86567-F085N-Channel PowerTrench MOSFET 60 V, 100 A, 3.2 mFeatures Typical RDS(on) = 2.6 m at VGS = 10V, ID = 80 AD Typical Qg(tot) = 63 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplicationsS Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Start

 7.1. Size:446K  onsemi
fdd86569-f085.pdf pdf_icon

FDD86567-F085

FDD86569-F085N-Channel PowerTrench MOSFET 60 V, 90 A, 5.7 mDFeatures Typical RDS(on) = 4.2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 35 nC at VGS = 10V, ID = 80 AD UIS Capability GG RoHS CompliantS Qualified to AEC Q101D-PAKTO-252Applications S(TO-252) Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starte

 8.1. Size:241K  fairchild semi
fdd86540.pdf pdf_icon

FDD86567-F085

February 2012FDD86540N-Channel PowerTrench MOSFET 60 V, 50 A, 4.1 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.1 m at VGS = 10 V, ID = 21.5 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 5 m at VGS = 8 V, ID = 19.5 Aringing of DC/DC converters using either synchronous or conventional

 8.2. Size:426K  onsemi
fdd86580-f085.pdf pdf_icon

FDD86567-F085

FDD86580-F085N-Channel PowerTrench MOSFET 60 V, 50 A, 10 mFeatures Typical RDS(on) = 7.8 m at VGS = 10V, ID = 50 AD Typical Qg(tot) = 20 nC at VGS = 10V, ID = 50 A UIS Capability RoHS CompliantDG Qualified to AEC Q101GApplicationsSD-PAK Automotive Engine ControlTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Electronic Steering

Datasheet: FDD8447L_F085 , FDD8453LZ-F085 , FDD86250_F085 , FDD86367 , FDD86367-F085 , FDD86369 , FDD86369-F085 , FDD86380-F085 , IRFP260N , FDD86569-F085 , FDD86580-F085 , FDD86581-F085 , FDD8896-F085 , FDD9407-F085 , FDD9407L-F085 , FDD9409L-F085 , FDD9410-F085 .

Keywords - FDD86567-F085 MOSFET datasheet

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