FDG6332C-F085 Specs and Replacement

Type Designator: FDG6332C-F085

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 34 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: SC70-6

FDG6332C-F085 substitution

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FDG6332C-F085 datasheet

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FDG6332C-F085

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

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Detailed specifications: FDD9410-F085, FDD9410L-F085, FDD9411-F085, FDD9411L-F085, FDD9507L-F085, FDD9509L-F085, FDD9510L-F085, FDD9511L-F085, AON7408, FDMC010N08C, FDMC8010DC, FDMD8530, FDMD8540L, FDMD8560L, 2N7002NXAK, 2N7002NXBK, BUK6D120-40E

Keywords - FDG6332C-F085 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs