BUK6D210-60E PDF and Equivalents Search

 

BUK6D210-60E Specs and Replacement

Type Designator: BUK6D210-60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.1 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 16 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm

Package: SOT1220

BUK6D210-60E substitution

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BUK6D210-60E datasheet

 ..1. Size:494K  nxp
 buk6d210-60e.pdf pdf_icon

BUK6D210-60E

BUK6D210-60E 60 V, N-channel Trench MOSFET 17 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins... See More ⇒

 8.1. Size:280K  nxp
 buk6d230-80e.pdf pdf_icon

BUK6D210-60E

BUK6D230-80E 80 V, N-channel Trench MOSFET 29 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins... See More ⇒

 8.2. Size:284K  nxp
 buk6d23-40e.pdf pdf_icon

BUK6D210-60E

BUK6D23-40E 40 V, N-channel Trench MOSFET 13 December 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder i... See More ⇒

 8.3. Size:280K  nxp
 buk6d22-30e.pdf pdf_icon

BUK6D210-60E

BUK6D22-30E 30 V, N-channel Trench MOSFET 10 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder insp... See More ⇒

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Detailed specifications: FDMD8530 , FDMD8540L , FDMD8560L , 2N7002NXAK , 2N7002NXBK , BUK6D120-40E , BUK6D120-60P , BUK6D125-60E , SPP20N60C3 , BUK6D22-30E , BUK6D230-80E , BUK6D23-40E , BUK6D38-30E , BUK6D385-100E , BUK6D43-40P , BUK6D43-60E , BUK6D56-60E .

Keywords - BUK6D210-60E MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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