All MOSFET. BUK6D23-40E Datasheet

 

BUK6D23-40E Datasheet and Replacement


   Type Designator: BUK6D23-40E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 101 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: SOT1220
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BUK6D23-40E Datasheet (PDF)

 ..1. Size:284K  nxp
 buk6d23-40e.pdf pdf_icon

BUK6D23-40E

BUK6D23-40E40 V, N-channel Trench MOSFET13 December 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder i

 7.1. Size:280K  nxp
 buk6d230-80e.pdf pdf_icon

BUK6D23-40E

BUK6D230-80E80 V, N-channel Trench MOSFET29 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins

 8.1. Size:494K  nxp
 buk6d210-60e.pdf pdf_icon

BUK6D23-40E

BUK6D210-60E60 V, N-channel Trench MOSFET17 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins

 8.2. Size:280K  nxp
 buk6d22-30e.pdf pdf_icon

BUK6D23-40E

BUK6D22-30E30 V, N-channel Trench MOSFET10 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder insp

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Keywords - BUK6D23-40E MOSFET datasheet

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