BUK6D23-40E MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK6D23-40E
Marking Code: 4R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 11 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 101 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: SOT1220
BUK6D23-40E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK6D23-40E Datasheet (PDF)
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