BUK6D385-100E Specs and Replacement
Type Designator: BUK6D385-100E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.4 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ -
Output Capacitance: 13 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.385 Ohm
Package: SOT1220
BUK6D385-100E substitution
- MOSFET ⓘ Cross-Reference Search
BUK6D385-100E datasheet
..1. Size:278K nxp
buk6d385-100e.pdf 
BUK6D385-100E 100 V, N-channel Trench MOSFET 29 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder i... See More ⇒
7.1. Size:279K nxp
buk6d38-30e.pdf
BUK6D38-30E 30 V, N-channel Trench MOSFET 12 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder insp... See More ⇒
9.1. Size:494K nxp
buk6d210-60e.pdf
BUK6D210-60E 60 V, N-channel Trench MOSFET 17 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins... See More ⇒
9.2. Size:280K nxp
buk6d230-80e.pdf
BUK6D230-80E 80 V, N-channel Trench MOSFET 29 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins... See More ⇒
9.3. Size:276K nxp
buk6d43-40p.pdf
BUK6D43-40P 40 V, P-channel Trench MOSFET 20 December 2017 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 Side wettable flanks for optical solder i... See More ⇒
9.4. Size:293K nxp
buk6d43-60e.pdf
BUK6D43-60E 60 V, N-channel Trench MOSFET 13 December 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder i... See More ⇒
9.5. Size:294K nxp
buk6d81-80e.pdf
BUK6D81-80E 80 V, N-channel Trench MOSFET 4 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder inspe... See More ⇒
9.6. Size:284K nxp
buk6d56-60e.pdf
BUK6D56-60E 60 V, N-channel Trench MOSFET 3 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder inspe... See More ⇒
9.7. Size:317K nxp
buk6d120-60p.pdf
BUK6D120-60P 60 V, P-channel Trench MOSFET 3 April 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 Side wettable flanks for optical s... See More ⇒
9.8. Size:283K nxp
buk6d120-40e.pdf
BUK6D120-40E 40 V, N-channel Trench MOSFET 29 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins... See More ⇒
9.9. Size:281K nxp
buk6d72-30e.pdf
BUK6D72-30E 30 V, N-channel Trench MOSFET 29 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder insp... See More ⇒
9.10. Size:293K nxp
buk6d77-60e.pdf
BUK6D77-60E 60 V, N-channel Trench MOSFET 4 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder inspe... See More ⇒
9.11. Size:284K nxp
buk6d23-40e.pdf
BUK6D23-40E 40 V, N-channel Trench MOSFET 13 December 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder i... See More ⇒
9.12. Size:284K nxp
buk6d125-60e.pdf
BUK6D125-60E 60 V, N-channel Trench MOSFET 29 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins... See More ⇒
9.13. Size:280K nxp
buk6d22-30e.pdf
BUK6D22-30E 30 V, N-channel Trench MOSFET 10 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder insp... See More ⇒
Detailed specifications: BUK6D120-40E, BUK6D120-60P, BUK6D125-60E, BUK6D210-60E, BUK6D22-30E, BUK6D230-80E, BUK6D23-40E, BUK6D38-30E, 12N60, BUK6D43-40P, BUK6D43-60E, BUK6D56-60E, BUK6D72-30E, BUK6D77-60E, BUK6D81-80E, BUK7D25-40E, BUK7J1R0-40H
Keywords - BUK6D385-100E MOSFET specs
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