BUK6D43-40P Datasheet and Replacement
Type Designator: BUK6D43-40P
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pd ⓘ
- Maximum Power Dissipation: 2.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 6
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
tr ⓘ - Rise Time: 23
nS
Cossⓘ -
Output Capacitance: 106
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.043
Ohm
Package: SOT1220
-
MOSFET ⓘ Cross-Reference Search
BUK6D43-40P Datasheet (PDF)
..1. Size:276K nxp
buk6d43-40p.pdf 
BUK6D43-40P40 V, P-channel Trench MOSFET20 December 2017 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 Side wettable flanks for optical solder i
6.1. Size:293K nxp
buk6d43-60e.pdf
BUK6D43-60E60 V, N-channel Trench MOSFET13 December 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder i
9.1. Size:494K nxp
buk6d210-60e.pdf
BUK6D210-60E60 V, N-channel Trench MOSFET17 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins
9.2. Size:280K nxp
buk6d230-80e.pdf
BUK6D230-80E80 V, N-channel Trench MOSFET29 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins
9.3. Size:294K nxp
buk6d81-80e.pdf
BUK6D81-80E80 V, N-channel Trench MOSFET4 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder inspe
9.4. Size:284K nxp
buk6d56-60e.pdf
BUK6D56-60E60 V, N-channel Trench MOSFET3 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder inspe
9.5. Size:317K nxp
buk6d120-60p.pdf
BUK6D120-60P60 V, P-channel Trench MOSFET3 April 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 Side wettable flanks for optical s
9.6. Size:283K nxp
buk6d120-40e.pdf
BUK6D120-40E40 V, N-channel Trench MOSFET29 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins
9.7. Size:281K nxp
buk6d72-30e.pdf
BUK6D72-30E30 V, N-channel Trench MOSFET29 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder insp
9.8. Size:293K nxp
buk6d77-60e.pdf
BUK6D77-60E60 V, N-channel Trench MOSFET4 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder inspe
9.9. Size:284K nxp
buk6d23-40e.pdf
BUK6D23-40E40 V, N-channel Trench MOSFET13 December 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder i
9.10. Size:284K nxp
buk6d125-60e.pdf
BUK6D125-60E60 V, N-channel Trench MOSFET29 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder ins
9.11. Size:280K nxp
buk6d22-30e.pdf
BUK6D22-30E30 V, N-channel Trench MOSFET10 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder insp
9.12. Size:278K nxp
buk6d385-100e.pdf
BUK6D385-100E100 V, N-channel Trench MOSFET29 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder i
9.13. Size:279K nxp
buk6d38-30e.pdf
BUK6D38-30E30 V, N-channel Trench MOSFET12 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Side wettable flanks for optical solder insp
Datasheet: BUK6D120-60P
, BUK6D125-60E
, BUK6D210-60E
, BUK6D22-30E
, BUK6D230-80E
, BUK6D23-40E
, BUK6D38-30E
, BUK6D385-100E
, 4435
, BUK6D43-60E
, BUK6D56-60E
, BUK6D72-30E
, BUK6D77-60E
, BUK6D81-80E
, BUK7D25-40E
, BUK7J1R0-40H
, BUK7J1R4-40H
.
Keywords - BUK6D43-40P MOSFET datasheet
BUK6D43-40P cross reference
BUK6D43-40P equivalent finder
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