All MOSFET. BUK7K32-100E Datasheet

 

BUK7K32-100E Datasheet and Replacement


   Type Designator: BUK7K32-100E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 64 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 29 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 10.9 nS
   Cossⓘ - Output Capacitance: 164 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0275 Ohm
   Package: SOT1205
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BUK7K32-100E Datasheet (PDF)

 ..1. Size:712K  nxp
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BUK7K32-100E

BUK7K32-100EDual N-channel 100 V, 27.5 m standard level MOSFET2 September 2015 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified to AECQ101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

 8.1. Size:311K  nxp
buk7k35-60e.pdf pdf_icon

BUK7K32-100E

BUK7K35-60EDual N-channel 60 V, 30 m standard level MOSFET15 November 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

 9.1. Size:713K  nxp
buk7k134-100e.pdf pdf_icon

BUK7K32-100E

BUK7K134-100EDual N-channel 100 V, 121 m standard level MOSFET2 September 2015 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified to AECQ101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

 9.2. Size:255K  nxp
buk7k17-80e.pdf pdf_icon

BUK7K32-100E

BUK7K17-80EDual N-channel 80 V, 17 m standard level MOSFET10 May 2018 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC

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History: PK510BA | RSS050P03FU6TB | ZXMP10A16K | FDD4685 | STD120N4F6 | JCS20N60FH | IXFH96N20P

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