BUK7K89-100E MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK7K89-100E
Marking Code: 78910E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 13.6 nC
trⓘ - Rise Time: 5.9 nS
Cossⓘ - Output Capacitance: 74 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0825 Ohm
Package: SOT1205
BUK7K89-100E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK7K89-100E Datasheet (PDF)
buk7k89-100e.pdf
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buk7k17-80e.pdf
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buk7k15-80e.pdf
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buk7k12-60e.pdf
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buk7k5r1-30e.pdf
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buk7k52-60e.pdf
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buk7k23-80e.pdf
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buk7k6r8-40e.pdf
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buk7k18-40e.pdf
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buk7k17-60e.pdf
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