All MOSFET. BUK7M6R0-40H Datasheet

 

BUK7M6R0-40H Datasheet and Replacement


   Type Designator: BUK7M6R0-40H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 6.4 nS
   Cossⓘ - Output Capacitance: 446 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: SOT1210
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BUK7M6R0-40H Datasheet (PDF)

 ..1. Size:287K  nxp
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BUK7M6R0-40H

BUK7M6R0-40HN-channel 40 V, 6.0 m standard level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully aut

 7.1. Size:287K  nxp
buk7m6r7-40h.pdf pdf_icon

BUK7M6R0-40H

BUK7M6R7-40HN-channel 40 V, 6.7 m standard level MOSFET in LFPAK335 February 2019 Product data sheet1. General descriptionAutomotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully aut

 7.2. Size:722K  nxp
buk7m6r3-40e.pdf pdf_icon

BUK7M6R0-40H

BUK7M6R3-40EN-channel 40 V, 6.3 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant

 8.1. Size:718K  nxp
buk7m67-60e.pdf pdf_icon

BUK7M6R0-40H

BUK7M67-60EN-channel 60 V, 67 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: MTP5P25 | RFD16N05SM | BUK7L06-34ARC | PH3855L | IXFH9N80 | PJS6403 | FHD100N03A

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