BUK7S0R9-40H Datasheet and Replacement
Type Designator: BUK7S0R9-40H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 375 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 1908 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0009 Ohm
Package: SOT1235
BUK7S0R9-40H substitution
BUK7S0R9-40H Datasheet (PDF)
buk7s0r9-40h.pdf

BUK7S0R9-40HN-channel 40 V, 0.9 m standard level MOSFET in LFPAK882 May 2019 Product data sheet1. General descriptionAutomotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunctiontechnology, housed in a copper-clip LFPAK88 package. This product has been fully designed andqualified to meet beyond AEC-Q101 requirements delivering high performance and reliabi
buk7s0r7-40h.pdf

BUK7S0R7-40HN-channel 40 V, 0.7 m standard level MOSFET in LFPAK882 May 2019 Product data sheet1. General descriptionAutomotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunctiontechnology, housed in a copper-clip LFPAK88 package. This product has been fully designed andqualified to meet beyond AEC-Q101 requirements delivering high performance and reliabi
buk7s1r0-40h.pdf

BUK7S1R0-40HN-channel 40 V, 1.0 m standard level MOSFET in LFPAK8826 April 2019 Product data sheet1. General descriptionAutomotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunctiontechnology, housed in a copper-clip LFPAK88 package. This product has been fully designed andqualified to meet beyond AEC-Q101 requirements delivering high performance and reli
Datasheet: BUK7M6R0-40H , BUK7M6R3-40E , BUK7M6R7-40H , BUK7M8R0-40E , BUK7M8R5-40H , BUK7M9R5-40H , BUK7M9R9-60E , BUK7S0R7-40H , IRFZ48N , BUK7S1R0-40H , BUK7Y1R4-40H , BUK7Y1R7-40H , BUK7Y2R0-40H , BUK7Y2R5-40H , BUK7Y3R0-40H , BUK7Y3R5-40H , BUK9D23-40E .
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BUK7S0R9-40H replacement



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