BUK7Y1R4-40H Datasheet and Replacement
Type Designator: BUK7Y1R4-40H
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 395
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 190
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
tr ⓘ - Rise Time: 17
nS
Cossⓘ -
Output Capacitance: 1314
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014
Ohm
Package:
SOT669
BUK7Y1R4-40H substitution
-
MOSFET ⓘ Cross-Reference Search
BUK7Y1R4-40H Datasheet (PDF)
..1. Size:268K nxp
buk7y1r4-40h.pdf 
BUK7Y1R4-40HN-channel 40 V, 1.4 m standard level MOSFET in LFPAK5631 May 2018 Product data sheet1. General descriptionAutomotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunctiontechnology, housed in a robust LFPAK56 package. This product has been fully designed andqualified to meet AEC-Q101 requirements delivering high performance and endurance.2. Fea
7.1. Size:262K nxp
buk7y1r7-40h.pdf
BUK7Y1R7-40HN-channel 40 V, 1.7 m standard level MOSFET in LFPAK569 May 2018 Product data sheet1. General descriptionAutomotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunctiontechnology, housed in a robust LFPAK56 package. This product has been fully designed andqualified to meet AEC-Q101 requirements delivering high performance and endurance.2. Feat
8.1. Size:190K philips
buk7y13-40b.pdf
BUK7Y13-40BN-channel TrenchMOS standard level FETRev. 03 26 May 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in au
8.2. Size:343K nxp
buk7y14-80e.pdf
BUK7Y14-80EN-channel 80 V, 14 m standard level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repeti
8.3. Size:784K nxp
buk7y18-55b.pdf
BUK7Y18-55BN-channel TrenchMOS standard level FETRev. 04 7 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use
8.4. Size:295K nxp
buk7y12-100e.pdf
BUK7Y12-100EN-channel 100 V, 12 m standard level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repe
8.5. Size:316K nxp
buk7y15-100e.pdf
BUK7Y15-100EN-channel 100 V, 15 m standard level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repe
8.6. Size:293K nxp
buk7y19-100e.pdf
BUK7Y19-100EN-channel 100 V, 19 m standard level MOSFET in LFPAK566 November 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant
8.7. Size:800K nxp
buk7y10-30b.pdf
BUK7Y10-30BN-channel TrenchMOS standard level FETRev. 03 9 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use
8.8. Size:933K nxp
buk7y102-100b.pdf
BUK7Y102-100BN-channel TrenchMOS standard level FETRev. 03 7 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use
8.9. Size:790K nxp
buk7y12-55b.pdf
BUK7Y12-55BN-channel TrenchMOS standard level FETRev. 03 7 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use
8.10. Size:343K nxp
buk7y15-60e.pdf
BUK7Y15-60EN-channel 60 V, 15 m standard level MOSFET in LFPAK567 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repeti
8.11. Size:294K nxp
buk7y113-100e.pdf
BUK7Y113-100EN-channel 100 V, 113 m standard level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Re
8.12. Size:312K nxp
buk7y12-40e.pdf
BUK7Y12-40EN-channel 40 V, 12 m standard level MOSFET in LFPAK569 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repeti
8.13. Size:736K nxp
buk7y13-40b.pdf
BUK7Y13-40BN-channel TrenchMOS standard level FETRev. 03 26 May 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use
8.14. Size:799K nxp
buk7y18-75b.pdf
BUK7Y18-75BN-channel TrenchMOS standard level FET1 March 2013 Product data sheet1. General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicati
8.15. Size:310K nxp
buk7y153-100e.pdf
BUK7Y153-100EN-channel 100 V, 153 m standard level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Re
Datasheet: BUK7M6R7-40H
, BUK7M8R0-40E
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, MMD60R360PRH
, BUK7Y1R7-40H
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