BUK9K30-80E Specs and Replacement

Type Designator: BUK9K30-80E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 53 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.8 nS

Cossⓘ - Output Capacitance: 126 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: SOT1205

BUK9K30-80E substitution

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BUK9K30-80E datasheet

 ..1. Size:268K  nxp
buk9k30-80e.pdf pdf_icon

BUK9K30-80E

BUK9K30-80E Dual N-channel 80 V, 30 m logic level MOSFET 12 May 2018 Product data sheet 1. General description Dual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC-Q101 ... See More ⇒

 8.1. Size:336K  nxp
buk9k32-100e.pdf pdf_icon

BUK9K30-80E

BUK9K32-100E Dual N-channel 100 V, 33 m logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q1... See More ⇒

 8.2. Size:244K  nxp
buk9k35-60e.pdf pdf_icon

BUK9K30-80E

BUK9K35-60E Dual N-channel 60 V, 35 m logic level MOSFET 12 November 2014 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET Q101... See More ⇒

 9.1. Size:294K  nxp
buk9k6r2-40e.pdf pdf_icon

BUK9K30-80E

BUK9K6R2-40E Dual N-channel TrenchMOS logic level FET 23 April 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated ... See More ⇒

Detailed specifications: BUK7Y2R0-40H, BUK7Y2R5-40H, BUK7Y3R0-40H, BUK7Y3R5-40H, BUK9D23-40E, BUK9J0R9-40H, BUK9K20-80E, BUK9K22-80E, IRF740, BUK9K5R1-30E, BUK9K5R6-30E, BUK9M10-30E, BUK9M11-40E, BUK9M11-40H, BUK9M120-100E, BUK9M12-60E, BUK9M14-40E

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