All MOSFET. BUK9K30-80E Datasheet

 

BUK9K30-80E Datasheet and Replacement


   Type Designator: BUK9K30-80E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 14.8 nS
   Cossⓘ - Output Capacitance: 126 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: SOT1205
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BUK9K30-80E Datasheet (PDF)

 ..1. Size:268K  nxp
buk9k30-80e.pdf pdf_icon

BUK9K30-80E

BUK9K30-80EDual N-channel 80 V, 30 m logic level MOSFET12 May 2018 Product data sheet1. General descriptionDual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC-Q101

 8.1. Size:336K  nxp
buk9k32-100e.pdf pdf_icon

BUK9K30-80E

BUK9K32-100EDual N-channel 100 V, 33 m logic level MOSFET10 December 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q1

 8.2. Size:244K  nxp
buk9k35-60e.pdf pdf_icon

BUK9K30-80E

BUK9K35-60EDual N-channel 60 V, 35 m logic level MOSFET12 November 2014 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q101

 9.1. Size:294K  nxp
buk9k6r2-40e.pdf pdf_icon

BUK9K30-80E

BUK9K6R2-40EDual N-channel TrenchMOS logic level FET23 April 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive avalanche rated

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History: RJK0331DPB-00

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