BUK9M120-100E MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9M120-100E
Marking Code: 912010
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.05 V
|Id|ⓘ - Maximum Drain Current: 11.5 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 8.8 nC
trⓘ - Rise Time: 9.1 nS
Cossⓘ - Output Capacitance: 52 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.119 Ohm
Package: SOT1210
BUK9M120-100E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK9M120-100E Datasheet (PDF)
buk9m120-100e.pdf
BUK9M120-100EN-channel 100 V, 120 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Rep
buk9m12-60e.pdf
BUK9M12-60EN-channel 60 V, 12 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit
buk9m10-30e.pdf
BUK9M10-30EN-channel 30 V, 10 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit
buk9m15-60e.pdf
BUK9M15-60EN-channel 60 V, 15 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit
buk9m14-40e.pdf
BUK9M14-40EN-channel 40 V, 14 m logic level MOSFET in LFPAK3313 May 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive av
buk9m19-60e.pdf
BUK9M19-60EN-channel 60 V, 19 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit
buk9m17-30e.pdf
BUK9M17-30EN-channel 30 V, 17 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit
buk9m11-40e.pdf
BUK9M11-40EN-channel 40 V, 11 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit
buk9m15-40h.pdf
BUK9M15-40HN-channel 40 V, 15.0 m logic level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully automotiv
buk9m156-100e.pdf
BUK9M156-100EN-channel 100 V, 156 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Rep
buk9m11-40h.pdf
BUK9M11-40HN-channel 40 V, 11.0 m logic level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully automotiv
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: IRL3103D1
History: IRL3103D1
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918