STP4N90FI Datasheet and Replacement

   Type Designator: STP4N90FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 2.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 55 nC
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.4 Ohm
   Package: ISOWATT220

STP4N90FI substitution

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STP4N90FI Datasheet (PDF)

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stp4n90fi.pdf pdf_icon

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STP4N90K5 N-channel 900 V, 1.90 typ.,3 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I DS DS(on) DTABSTP4N90K5 900 V 2.10 3 A Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) 32 Ultra-low gate charge 1 100% avalanche tested TO-220 Zener-protected Appl

7.2. Size:324K st
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9.2. Size:338K st
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STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3N-channel 620 V, 1.7 typ., 3.8 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220 and IPAK packagesDatasheet production dataFeaturesTABOrder codes VDSS RDS(on) max ID PTOT3STF4N62K3 25 W 32211STFI4N62K3 25 WTO-220FPIPAKSTI4N62K3 620 V

9.4. Size:82K st
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STP4NM60STD3NM60 - STD3NM60-1N-CHANNEL 600V - 1.3 - 3A TO-220/DPAK/IPAKZener-Protected MDmeshPower MOSFETTYPE VDSS RDS(on) ID PwSTP4NM60 600 V

9.7. Size:383K st
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STB4NK60Z, STB4NK60Z-1, STD4NK60ZSTD4NK60Z-1, STP4NK60Z,STP4NK60ZFPN-channel 600 V - 1.76 - 4 A SuperMESH Power MOSFETDPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FPFeaturesRDS(on) Type VDSS PW ID 332max3 1121STB4NK60Z 600 V

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9.12. Size:96K st
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9.13. Size:917K st
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9.14. Size:53K st
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9.15. Size:239K st
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9.16. Size:391K st
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9.17. Size:932K st
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STD4N52K3, STF4N52K3STP4N52K3, STU4N52K3N-channel 525 V, 2.5 A, 2.1 , IPAK, DPAK, TO-220FP, TO-220SuperMESH3 Power MOSFETFeaturesRDS(on) Order codes VDSS ID Pwmax 33211STD4N52K3 2.5 A 45 WDPAKIPAKSTF4N52K3 2.5 A 20 W525 V

9.18. Size:759K st
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9.19. Size:705K st
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9.20. Size:324K st
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9.23. Size:666K st
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9.24. Size:246K st
stp4nb80.pdf pdf_icon

STP4NB80STP4NB80FPN - CHANNEL 800V - 3 - 4A - TO-220/TO-220FPPowerMESH MOSFETTYPE VDSS RDS(on) IDSTP4NB80 800 V 3.3 4 ASTP4NB80FP 800 V 3.3 4 A TYPICAL R = 3 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED3 32 2DESCRIPTION 1 1Using the latest high voltage MESH OVERLAYp

9.25. Size:553K st
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9.26. Size:176K st
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9.27. Size:550K st
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9.28. Size:291K st
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9.29. Size:1294K st
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9.30. Size:903K st
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9.31. Size:801K st
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9.32. Size:331K st
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9.33. Size:210K st
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9.34. Size:286K st
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9.36. Size:382K st
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9.38. Size:77K st
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9.39. Size:620K st
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9.40. Size:405K st
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9.41. Size:701K st
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9.42. Size:201K inchange semiconductor
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP4NK60ZFPFEATURESWith TO-220F packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

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