All MOSFET. BUK9M53-60E Datasheet

 

BUK9M53-60E Datasheet and Replacement


   Type Designator: BUK9M53-60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 7.6 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: SOT1210
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BUK9M53-60E Datasheet (PDF)

 ..1. Size:721K  nxp
buk9m53-60e.pdf pdf_icon

BUK9M53-60E

BUK9M53-60EN-channel 60 V, 53 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit

 8.1. Size:723K  nxp
buk9m5r2-30e.pdf pdf_icon

BUK9M53-60E

BUK9M5R2-30EN-channel 30 V, 5.2 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repet

 8.2. Size:305K  nxp
buk9m5r0-40h.pdf pdf_icon

BUK9M53-60E

BUK9M5R0-40HN-channel 40 V, 5.0 m logic level MOSFET in LFPAK3313 March 2020 Product data sheet1. General descriptionAutomotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully automotive

 9.1. Size:715K  nxp
buk9m34-100e.pdf pdf_icon

BUK9M53-60E

BUK9M34-100EN-channel 100 V, 34 m logic level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repet

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPB60R520CP | IRF441 | AP9926GEO | RW1C020UN | GSM3050S | WM02P30ME | STD4N62K3

Keywords - BUK9M53-60E MOSFET datasheet

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