BUK9Y1R6-40H MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9Y1R6-40H
Marking Code: 91H640
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 294 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.05 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 77 nC
trⓘ - Rise Time: 30.3 nS
Cossⓘ - Output Capacitance: 1022 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: SOT669
BUK9Y1R6-40H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK9Y1R6-40H Datasheet (PDF)
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Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: R6020FNX
History: R6020FNX
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918