NX138BKS MOSFET. Datasheet pdf. Equivalent
Type Designator: NX138BKS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.285 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 0.21 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 0.5 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 3.1 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: SOT363
NX138BKS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NX138BKS Datasheet (PDF)
nx138bks.pdf
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NX138AKS60 V, dual N-channel Trench MOSFET15 June 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroSt
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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
