PMCM4401UNE Specs and Replacement

Type Designator: PMCM4401UNE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: WLCSP4

PMCM4401UNE substitution

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PMCM4401UNE datasheet

 ..1. Size:263K  nxp
 pmcm4401une.pdf pdf_icon

PMCM4401UNE

PMCM4401UNE 20 V, N-channel Trench MOSFET 29 May 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Discha... See More ⇒

 5.1. Size:715K  nxp
 pmcm4401upe.pdf pdf_icon

PMCM4401UNE

PMCM4401UPE 20 V, P-channel Trench MOSFET 7 October 2016 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic D... See More ⇒

 6.1. Size:318K  nxp
 pmcm4401vne.pdf pdf_icon

PMCM4401UNE

PMCM4401VNE 12V, N-channel Trench MOSFET 24 July 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Disc... See More ⇒

 6.2. Size:317K  nxp
 pmcm4401vpe.pdf pdf_icon

PMCM4401UNE

PMCM4401VPE 12 V, P-channel Trench MOSFET 29 July 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Dis... See More ⇒

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Detailed specifications: NX3008NBKMB, NX3008PBKMB, NX3020NAKS, NX3020NAKV, NX3020NAKW, NX6020CAKS, NX7002AKA, NX7002BKH, TK10A60D, PMCM4401UPE, PMCM4402UPE, PMCM6501UNE, PMCM6501UPE, PMCM6501VNE, PMCM650CUNE, PMCM950ENE, PMCXB1000UE

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.