All MOSFET. PMCM4401UNE Datasheet

 

PMCM4401UNE Datasheet and Replacement


   Type Designator: PMCM4401UNE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 4.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: WLCSP4
      - MOSFET Cross-Reference Search

 

PMCM4401UNE Datasheet (PDF)

 ..1. Size:263K  nxp
pmcm4401une.pdf pdf_icon

PMCM4401UNE

PMCM4401UNE20 V, N-channel Trench MOSFET29 May 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Discha

 5.1. Size:715K  nxp
pmcm4401upe.pdf pdf_icon

PMCM4401UNE

PMCM4401UPE20 V, P-channel Trench MOSFET7 October 2016 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic D

 6.1. Size:318K  nxp
pmcm4401vne.pdf pdf_icon

PMCM4401UNE

PMCM4401VNE12V, N-channel Trench MOSFET24 July 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Disc

 6.2. Size:317K  nxp
pmcm4401vpe.pdf pdf_icon

PMCM4401UNE

PMCM4401VPE12 V, P-channel Trench MOSFET29 July 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Dis

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CHM85A3PAGP | SFFX054Z

Keywords - PMCM4401UNE MOSFET datasheet

 PMCM4401UNE cross reference
 PMCM4401UNE equivalent finder
 PMCM4401UNE lookup
 PMCM4401UNE substitution
 PMCM4401UNE replacement

 

 
Back to Top

 


 
.