STP50N05L Datasheet and Replacement

   Type Designator: STP50N05L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 42 nC
   tr ⓘ - Rise Time: 550 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: TO220
     - MOSFET ⓘ Cross-Reference Search