All MOSFET. STP50N05L Datasheet

 

STP50N05L MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP50N05L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 42 nC
   trⓘ - Rise Time: 550 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: TO220

 STP50N05L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP50N05L Datasheet (PDF)

 ..1. Size:336K  st
 stp50n05l stp50n05lfi.pdf

STP50N05L STP50N05L

 7.1. Size:397K  st
 stp50n06l.pdf

STP50N05L STP50N05L

STP50N06LSTP50N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP50N06L 60 V

 7.2. Size:201K  st
 stp50n06-.pdf

STP50N05L STP50N05L

STP50N06STP50N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP50N06 60 V

 7.3. Size:396K  st
 stp50n06.pdf

STP50N05L STP50N05L

STP50N06STP50N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP50N06 60 V

 7.4. Size:404K  st
 stp50n06l-fi.pdf

STP50N05L STP50N05L

STP50N06LSTP50N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP50N06L 60 V

Datasheet: STP4N40FI , STP4N80XI , STP4N90 , STP4N90FI , STP4NA60 , STP4NA60FI , STP4NA80 , STP4NA80FI , IRF1404 , STP50N05LFI , STP50N06 , STP50N06FI , STP50N06L , STP50N06LFI , STP53N05 , STP53N06 , STP55N05L .

 

 
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